VBM1101N

VBM1101N/VBL1101N www.VBsemi.com N-Channel 100-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V 100 • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC 85 0.0100 at VGS = 6 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol Parameter Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) Avalanche Current L = 0.1 mH Single Pulse Avalanche Energyb Maximum Power Dissipationb 75 a IDM Pulsed Drain Current TC = 25 °C (TO-220AB and TO-263) TA = 25 °C (TO-263)d A 300 IAS 75 EAS 280 250 PD mJ c W 3.75 TJ, Tstg Operating Junction and Storage Temperature Range V 100 ID TC = 125 °C Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Symbol PCB Mount (TO-263)d Free Air (TO-220AB) RthJA RthJC Limit Unit 40 62.5 °C/W 0.6 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 1 VBM1101N/VBL1101N www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VDS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 1.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 Drain-Source Breakdown Voltage Gate-Threshold Voltage 3.5 ± 100 VDS = 100 V, VGS = 0 V, TJ = 175 °C a On-State Drain Current Drain-Source On-State Resistancea VDS = ≥ 5 V, VGS = 10 V ID(on) RDS(on) VGS = 10 V, ID = 30 A 0.0085 VGS = 4.5 V, ID = 20 A 0.010 VDS = 15 V, ID = 30 A µA A VGS = 10 V, ID = 30 A, TJ = 125 °C gfs nA 250 120 0.017 VGS = 10 V, ID = 30 A, TJ = 175 °C Forward Transconductancea V Ω 0.022 25 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Gate-Source Charge c Gate-Drain Charge Turn-On Delay Time c Timec Turn-Off DelayTime VGS = 0 V, VDS = 20 V, f = 1 MHz Qgs Fall Timec 105 VDS = 50 V, VGS = 10 V, ID = 85 A 160 nC 17 Qgd 23 td(on) 12 25 90 135 55 85 130 195 tr c pF 665 265 Qg c Rise 6550 td(off) VDD = 50 V, RL = 0.6 Ω ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 °C b IS 85 Pulsed Current ISM 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Qrr A IF = 85 A, VGS = 0 V 1.0 1.5 V 85 140 ns IF = 50 A, dI/dt = 100 A/µs 4.5 7 A 0.35 µC trr IRM(REC) ns 0.17 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VBM1101N/VBL1101N www.VBsemi.com TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 200 250 VGS = 10 V thru 6 V 5V 200 I D - Drain Current (A) I D - Drain Current (A) 150 150 100 4V 100 TC = 125 °C 50 50 - 55 °C 25 °C 3V 0 0 0 2 4 6 8 0 10 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 250 6 0.020 R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 200 25 °C 150 125 °C 100 50 0 0 20 40 60 80 0.015 VGS = 4.5 V VGS = 10 V 0.010 0.005 0.000 100 0 20 40 80 100 120 ID - Drain Current (A) ID - Drain Current (A) On-Resistance vs. Drain Current Transconductance 20 VGS - Gate-to-Source Voltage (V) 10 000 8000 C - Capacitance (pF) 60 Ciss 6000 4000 2000 Crss VDS = 50 V ID = 85 A 16 12 8 4 Coss 0 0 0 15 30 45 60 VDS - Drain-to-Source Voltage (V) Capacitance 75 0 50 100 150 200 Qg - Total Gate Charge (nC) Gate Charge 3 VBM1101N/VBL1101N www.VBsemi.com TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2.5 100 VGS = 10 V ID = 30 A I S - Source Current (A) (Normalized) R DS(on) - On-Resistance 2.0 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 140 130 100 IAV (A) at T A = 25 °C VDS (V) I Dav (a) 0.3 TJ - Junction Temperature (°C) 10 IAV (A) at T A = 150 °C ID = 250 µA 120 110 1 100 0.1 0.00001 4 0.0001 0.001 0.01 0.1 1 90 - 50 - 25 0 25 50 75 100 125 tin (s) TJ - Junction Temperature (°C) Avalanche Current vs. Time TJ - Drain-Source Breakdown vs. Junction-Temperature 150 175 VBM1101N/VBL1101N www.VBsemi.com THERMAL RATINGS 100 1000 10 µs 100 I D - Drain Current (A) I D - Drain Current (A) 80 60 40 100 µs 10 Limited by R DS(on)* 1 ms 10 ms 100 ms, DC 1 20 0 25 0 50 75 100 125 150 175 0.1 0.1 TC = 25 °C Single Pulse 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified TC - Case Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 5 VBM1101N/VBL1101N www.VBsemi.com TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. A 4.25 4.65 0.167 MAX. 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 0.055 F 1.14 1.40 0.045 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 0.552 L 13.35 14.02 0.526 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 6 VBM1101N/VBL1101N www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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