VBM1405

VBM1405 www.VBsemi.com N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0055 at VGS = 10 V 100 0.0070 at VGS = 4.5 V 90 Qg (Typ.) • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested RoHS 130 nC COMPLIANT APPLICATIONS • Synchronous Rectification • Power Supplies TO-220AB D G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Parameter TC = 70 °C TA = 25 °C 90c ID 31b Pulsed Drain Current IDM Avalanche Current Pulse IAS 85 EAS 320 Continuous Source-Drain Diode Current L = 0.1 mH TC = 25 °C TA = 25 °C 270 110 IS TC = 70 °C TA = 25 °C A 312a 200 PD W 3.13b 2.0b TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range V a, c 2.6b TC = 25 °C Maximum Power Dissipation A 25b TA = 70 °C Single Pulse Avalanche Energy V 100a, c TC = 25 °C Continuous Drain Current (TJ = 175 °C) Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Steady State Steady State Symbol RthJA RthJC Typical Maximum Unit 32 0.33 40 0.4 °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. Calculated based on maximum junction temperature. Package limitation current is 110 A. 1 VBM1405 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V 41 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.5 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V -8 1.2 120 µA A VGS = 10 V, ID = 30 A 0.0055 VGS = 4.5 V, ID = 20 A 0.0070 VDS = 15 V, ID = 30 A 180 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 310 Total Gate Charge Qg 130 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 2400 VDS = 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 20 A tr 20 nC 32 f = 1 MHz td(on) td(off) pF 750 VDD = 20 V, RL = 1.0 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω 0.85 1.3 20 30 11 17 77 115 tf 10 15 td(on) 102 155 tr td(off) VDD = 20 V, RL = 1.0 Ω ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω tf 62 95 180 270 60 90 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 110 200 IS = 20 A IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 50 75 ns 70 105 nC 30 20 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VBM1405 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 5 VGS = 10 thru 5 V 4 I D - Drain Current (A) I D - Drain Current (A) 200 150 VGS = 4 V 100 VGS = 3 V 3 TC = 125 °C 2 TC = 25 °C 50 1 TC = - 55 °C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 VDS - Drain-to-Source Voltage (V) 2 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.010 400 TC = - 55 °C R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 320 240 TC = 25 °C 160 TC = 125 °C 80 0.008 VGS = 4.5 V 0.006 0.004 VGS = 10 V 0.002 0.0000 0 0 30 15 45 60 75 0 90 20 ID - Drain Current (A) 40 60 80 100 120 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10 4200 ID = 20 A VGS - Gate-to-Source Voltage (V) C – Capacitance (pF) 3600 Ciss 3000 2400 1800 1200 Coss 600 8 VDS = 20 V 6 VDS = 10 V VDS = 30 V 4 2 Crss 0 0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance 50 60 0 50 100 150 200 250 Qg - Total Gate Charge (nC) Gate Charge 3 VBM1405 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 100 ID = 30 A 10 I S - Source Current (A) VGS = 10 V (Normalized) R DS(on) - On-Resistance 1.7 1.4 VGS = 4.5 V 1.1 TJ = 150 °C 0.1 0.8 0.01 0.5 - 50 - 25 0 25 50 75 100 125 0.001 0.0 150 0.2 0.4 0.6 1.0 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Forward Diode Voltage vs. Temperature 1.2 0.6 0.008 VGS(th) Variance (V) 0.2 0.006 0.004 TJ = 150 °C - 0.2 ID = 5 mA - 0.6 0.002 ID = 250 µA TJ = 25 °C - 1.0 - 50 0.000 0 2 6 4 8 10 - 25 1000 Limited by RDS(on)* 10 µs 100 µs I D - Drain Current (A) 100 1 ms 10 ms 100 ms, DC 10 1 TC = 25 °C Single Pulse BVDSS 0.01 0.1 25 50 75 Threshold Voltage On-Resistance vs. Gate-to-Source Voltage 0.1 0 TJ - Temperature (°C) VGS - Gate-to-Source Voltage (V) 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 0.8 VSD - Source-to-Drain Voltage (V) 0.010 R DS(on) - On-Resistance (Ω) TJ = 25 °C 1 100 125 150 VBM1405 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 350 400 350 280 Power (W) I D - Drain Current (A) 300 210 140 Package Limited 250 200 150 100 70 50 0 0 0 25 50 75 100 125 150 0 25 50 75 100 TJ - Junction to Case (°C) TJ - Junction to Case (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10-4 10 -3 10-2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 5 VBM1405 www.VBsemi.com TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. A 4.25 4.65 0.167 MAX. 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 Notes * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) 6 VBM1405 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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