VBM1603

VBM1603 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0090 ID (A) • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested 210 Configuration Single • Compliant to RoHS Directive 2002/95/EC TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 210 120 IS 120 IDM 480 IAS 75 EAS 281 PD UNIT a a 375 125 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc RthJA 40 RthJC 0.4 °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. 1 VBM1603 www.VBsemi.com SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 2.0 - 3.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = 60 V - - 1.0 - - 50 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V, TJ = 125 °C VGS = 0 V VDS = 60 V, TJ = 175 °C - - 350 On-State Drain Currenta ID(on) VGS = 10 V VDS5 V 120 - - VGS = 10 V ID = 30 A - 0.0035 - VGS = 10 V ID = 30 A, TJ = 125 °C - 0.0060 - VGS = 10 V ID = 30 A, TJ = 175 °C - 0.0080 - VGS = 4.5 V ID = 20 A - 0.0090 - - 109 - Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VDS = 15 V, ID = 30 A V nA μA A  S Dynamicb - 8600 - - 1000 - Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 750 - Total Gate Chargec Qg - 180 - - 24.7 - - 50.4 - f = 1 MHz 0.5 1.1 1.6 - 19 29 VDD = 30 V, RL = 0.27  ID  110 A, VGEN = 10 V, Rg = 2.5  - 23 35 - 83 125 - 35 53 - - 480 A - 0.9 1.5 V Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 30 V, ID = 110 A td(on) tr td(off) tf pF nC  ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 100 A, VGS = 0 Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VBM1603 www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 180 225 200 150 V GS = 10 V thru 5 V ID - Drain Current (A) ID - Drain Current (A) 175 150 125 V GS = 4 V 100 75 120 90 60 T C = 25 °C 50 30 T C = 125 °C 25 V GS = 3 V T C = - 55 °C 0 0 0 4 8 12 16 0 20 1 VDS - Drain-to-Source Voltage (V) 2 3 4 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 250 0.010 200 0.008 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) Output Characteristics T C = - 55 °C 150 T C = 25 °C 100 T C = 125 °C 50 0.006 V GS = 5 V 0.004 V GS = 10 V 0.002 0 0 0 16 32 48 64 0 80 20 ID - Drain Current (A) Transconductance 40 60 80 ID - Drain Current (A) 100 120 On-Resistance vs. Drain Current 10 VGS - Gate-to-Source Voltage (V) 12 000 10 000 C - Capacitance (pF) 5 Ciss 8000 6000 4000 2000 Coss ID = 110 A 8 V DS = 30 V 6 4 2 Crss 0 0 0 10 20 30 40 50 60 0 20 40 60 80 100 120 140 160 180 200 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 3 VBM1603 www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 2.1 ID = 30 A IS - Source Current (A) V GS = 10 V (Normalized) RDS(on) - On-Resistance T J = 25 °C 10 1.8 1.5 V GS = 4.5 V 1.2 T J = 150 °C 1 0.1 T J = - 50 °C 0.9 0.01 0.6 - 50 0.001 - 25 0 25 50 75 100 125 150 175 0 0.2 TJ - Junction Temperature (°C) 0.8 1.0 1.2 Source Drain Diode Forward Voltage 0.8 0.05 0.4 VGS(th) Variance (V) 0.04 0.03 0.02 0 - 0.4 ID = 5 mA - 0.8 T J = 150 °C ID = 250 μA 0.01 - 1.2 T J = 25 °C 0 0 2 4 6 8 - 1.6 - 50 10 - 25 0 On-Resistance vs. Gate-to-Source Voltage ID = 10 mA VDS - Drain-to-Source Voltage (V) 50 75 100 Threshold Voltage 80 77 74 71 68 65 - 50 25 TJ - Temperature (°C) VGS - Gate-to-Source Voltage (V) - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 4 0.6 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature RDS(on) - On-Resistance (Ω) 0.4 125 150 175 VBM1603 www.VBsemi.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited I D - Drain Current (A) 100 Limited by RDS(on)* 100 µs ID Limited 1 ms 10 10 ms 100 ms, 1 s, 10 s, DC 1 TC = 25 °C Single Pulse 0.1 BVDSS Limited 0.01 0.01 * VGS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 5 VBM1603 www.VBsemi.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 6 VBM1603 www.VBsemi.com TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. A 4.25 4.65 0.167 MAX. 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 Notes * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) 7 VBM1603 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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