VBQA1405

VBQA1405 www.VBsemi.com N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A)a, e 0.0050 at VGS = 10 V 70 0.0060 at VGS = 4.5 V 65 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) APPLICATIONS 67 nC • Notebook PC Core • VRM/POL D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Parameter TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C Unit V 70a, e 60e ID 19b, c TA = 70 °C A 18.6b, c Pulsed Drain Current IDM 120 Avalanche Current Pulse IAS 21 EAS 47.2 mJ 70a, e A Single Pulse Avalanche Energy Continuous Source-Drain Diode Current L = 0.1 mH TC = 25 °C TA = 25 °C IS 2.36b, c TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C 100a 55 PD TA = 70 °C 3.07b, c - 55 to 175 TJ, Tstg Operating Junction and Storage Temperature Range W 6.15b, c °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum t  10 s RthJA 47 56 Steady State RthJC 0.8 1.1 Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 90 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 80 A. 1 VBQA1405 www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min . VDS VGS = 0 V, ID = 250 µA 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ V 35 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.5 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS 5 V, VGS = 10 V - 5.5 1.2 70 µA A VGS = 10 V, ID = 32 A 0.005 VGS = 4.5 V, ID = 29 A 0.006 VDS = 15 V, ID = 32 A 110  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1195 VDS = 12.5 V, VGS = 0 V, f = 1 MHz tr pF 670 VDS = 15 V, VGS = 10 V, ID = 32 A 67 57.3 VDS = 15 V, VGS = 4.5 V, ID = 29 A nC 31 25 f = 1 MHz td(on) td(off) 975 VDD = 15 V, RL = 0.555  ID  27 A, VGEN = 10 V, Rg = 1  1.4 2.1 18 27 11 17 70 105 tf 10 15 td(on) 55 83 180 270 55 83 12 18 tr td(off) VDD = 15 V, RL = 0.625  ID  24 A, VGEN = 4.5 V, Rg = 1  tf  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 70 TC = 25 °C 100 IS = 22 A IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 52 78 ns 70.2 105 nC 27 25 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VBQA1405 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 3.0 VGS = 10 thru 4 V 2.4 ID - Drain Current (A) ID - Drain Current (A) 75 60 45 30 1.8 1.2 TC = 125 °C 0.6 15 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 V GS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics 4 Transfer Characteristics 0.012 RDS(on) - Drain-to-Source On-Resistance (Ω) 600 TC = 25 °C 500 G fs - Transconductance (S) - 55 °C TC = 25 °C VGS = 3 V VGS = 2 V TC = 125 °C 400 300 TC = - 55 °C 200 100 0.009 VGS = 4.5 V 0.006 VGS = 10 V 0.003 0 0 0 10 20 30 40 50 60 70 80 0 90 15 30 45 60 75 90 150 180 ID - Drain Current (A) ID - Drain Current (A) RDS(on) vs. Drain Current Transconductance 10 3000 C - Capacitance (pF) 1200 V G S - Gate-to-Source Voltage (V) ID = 32 A Ciss 1000 Coss 800 600 8 VDS = 15 V 6 VDS = 24 V 4 2 Crss 0 0 0 6 12 18 24 VDS - Drain-to-Source Voltage (V) Capacitance 30 0 30 60 90 120 Qg - Total Gate Charge (nC) Gate Charge 3 VBQA1405 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 VGS = 10 V, ID = 32 A VGS = 4.5 V, ID = 29.8 A 10 1.4 IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 1.6 1.2 1.0 T J = 150 °C 1 T J = 25 °C 0.1 0.01 0.8 0.6 - 50 0.001 - 25 0 25 50 75 100 125 150 0 175 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 1 Forward Diode Voltage vs. Temperature 0.004 2.8 TA = 125 °C 2.4 0.003 ID = 250 µA VGS(th) (V) RDS(on) - On-Resistance (Ω) ID = 32 A 0.002 TA = 25 °C 2.0 1.6 0.001 1.2 0.000 0 2 4 6 8 10 0.8 - 50 - 25 0 50 75 100 TJ - Temperature (°C) RDS(on) vs. VGS vs. Temperature Threshold Voltage 1000 100 Limited by rDS(on)* I D - Drain Current (A) 100 µs 1 ms 10 10 ms 100 ms 1 1s 10 s DC 0.1 0.01 TA = 25 °C Single Pulse 0.001 0.1 *VGS BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 25 VGS - Gate-to-Source Voltage (V) 125 150 175 VBQA1405 www.VBsemi.com 300 300 250 250 Power Dissipation (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 150 Package Limited 100 200 150 100 50 50 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 175 * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.01 10- 4 0.05 0.02 Single Pulse 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 5 VBQA1405 www.VBsemi.com 6 VBQA1405 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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