VBQF1303

VBQF1303 www.VBsemi.com N-Channel 30 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) 30 RDS(on) () Typ. Qg (Typ.) ID (A) 0.004 at VGS = 4.5 V 50 0.005 at VGS = 2.5 V 45 33.5 nC APPLICATIONS • • • • DFN 3x3 EP Motor Control Industrial Load Switch ORing D Bottom View Top View Top View 1 8 2 7 3 6 4 5 G S N-Channel MOSFET Pin 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit ID IDM Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Unit 30 ± 20 50 a, e 40 a, e 22b, c 15b, c 150 35 3.3b, c 20 20 52 33 3.7b, c 2.4b, c - 55 to 150 260 PD TJ, Tstg V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) t  10 s Steady State Symbol RthJA RthJC Typical 24 1.9 Maximum 33 2.4 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 90 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 80 A. 1 VBQF1303 www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ V 30 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.5 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS 5 V, VGS = 10 V - 5.6 0.5 30 µA A VGS 4.5 V, ID = 10 A 0.0040 VGS 2.5 V, ID = 7 A 0.0050 VDS = 15 V, ID = 10 A 65  S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 3065 VDS = 15 V, VGS = 0 V, f = 1 MHz td(off) pF 360 VDS = 15 V, VGS = 10 V, ID = 10 A 68 102 33.5 51 7.7 VDS = 15 V, VGS = 4.5 V, ID = 10 A f = 1 MHz VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  0.3 0.7 1.4 24 45 24 45 32 60 tf 12 24 td(on) 14 28 tr td(off) nC 13.8 td(on) tr 406 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  tf 13 26 33 60 8 16  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 35 A 70 IS = 3 A, VGS 0 V 0.7 1.1 V Body Diode Reverse Recovery Time trr 21 40 ns Body Diode Reverse Recovery Charge Qrr 10 20 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 9 12 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VBQF1303 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 70 VGS = 10 V thru 4 V 8 42 ID - Drain Current (A) ID - Drain Current (A) 56 VGS = 3 V 28 VGS = 2 V 6 TC = 25 °C 4 2 14 TC = - 55 °C TC = 125 °C 0 0 0 0.5 1 1.5 2 VDS - Drain-to-Source Voltage (V) 0 2.5 6.0 4.5 7.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4500 0.0100 3600 C - Capacitance (pF) 0.0120 0.0080 VGS = 4.5 V 0.0060 Ciss 2700 1800 VGS = 10 V 0.0040 900 Coss Crss 0.0020 0 0 12 24 36 ID - Drain Current (A) 48 60 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 ID = 10 A RDS(on) - On-Resistance (Normalized) ID = 10 A VGS - Gate-to-Source Voltage (V) RDS(on) - On-Resistance (Ω) 3.0 1.5 8 VDS = 15 V 6 VDS = 10 V VDS = 20 V 4 2 0 0 14 28 42 Qg - Total Gate Charge (nC) Gate Charge 56 70 1.6 VGS = 10 V 1.4 1.2 VGS = 4.5 V 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 VBQF1303 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.015 100 ID = 10 A 0.012 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.009 0.006 TJ = 125 °C 0.003 TJ = 25 °C 0.001 0.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 6 8 10 On-Resistance vs. Gate-to-Source Voltage 0.4 100 0.2 80 0 ID = 5 mA Power (W) VGS(th) - Variance (V) 4 VGS - Gate-to-Source Voltage (V) - 0.2 60 40 - 0.4 ID = 250 μA 20 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 TJ - Temperature (°C) 10 100 Single Pulse Power, Junction-to-Ambient 100 IDM Limited 10 ID - Drain Current (A) 1 Time (s) Threshold Voltage 100 μs ID Limited 1 ms 1 Limited by RDS(on)* 10 ms 100 ms 1s 0.1 10 s TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 0.1 100 VBQF1303 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 ID - Drain Current (A) 80 60 40 Limited by Package 20 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 65 2.0 52 1.6 39 1.2 Power (W) Power (W) Current Derating* 26 13 0.8 0.4 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 VBQF1303 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 81 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 6 1 10 VBQF1303 www.VBsemi.com 7 VBQF1303 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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