VBQF1310
www.VBsemi.com
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
0.010 at V
30
ID (A)a
RDS(on) (Ω)
0.018 at V
GS =
10 V
GS = 4.5 V
• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
Qg (Typ.)
30
26.5 nC
RoHS
COMPLIANT
25
APPLICATIONS
• DC/DC Conversion
- Low-Side Switch
• Notebook PC
• Gaming
DFN 3x3 EP
Top View
Bottom View
Top View
D
1
8
2
7
3
6
4
5
G
S
Pin 1
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Single Pulse Avalanche Current
Avalanche Energy
ID
TC = 25 °C
TA = 25 °C
IS
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Unit
V
21.5b, c
17.1b, c
100
13
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
30
± 20
30
22.6
A
3.1b, c
10
mJ
5
16.7
10.7
PD
3.7b, c
2.4b, c
- 55 to 150
TJ, Tstg
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
27
6
Maximum
34
7.5
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
1
VBQF1310
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 1 mA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
V
27
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
3.0
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS ≥ 5 V, VGS = 10 V
- 5.6
1.0
30
µA
A
VGS = 10 V, ID = 15 A
0.010
VGS = 4.5 V, ID = 10 A
0.018
VDS = 15 V, ID = 15 A
75
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Rg
Gate Resistance
650
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 10 A
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
20
9
nC
0.7
f = 1 MHz
0.2
1.1
8
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
16
2.2
30
17
35
15
td(on)
14
30
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
Ω
16
7
td(off)
Fall Time
10
4.5
tf
tr
Rise Time
Turn-Off Delay Time
pF
2.1
VDS = 15 V, VGS = 4.5 V, ID = 10 A
td(on)
Turn-On Delay Time
236
20
50
100
16
30
8
18
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
a
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25 °C
13
100
IS = 3 A
1.2
A
V
Body Diode Reverse Recovery Time
trr
40
ns
Body Diode Reverse Recovery Charge
Qrr
20
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
12.5
7.5
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Axis Title
50
50
VGS = 10 V thru 4 V
40
30
20
VGS = 3 V
1000
30
1st line
2nd line
2nd line
ID - Drain Current (A)
ID - Drain Current (A)
40
10000
20
100
TC = 25 °C
10
10
TC = 125 °C
TC = -55 °C
0
10
0
0
0
0.5
1
1.5
VDS - Drain-to-Source Voltage (V)
1
2
2
3
4
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
Output Characteristics
840
0.025
RDS(on) - On-Resistance (Ω)
Ciss
C - Capacitance (pF)
630
0.020
VGS = 4.5 V
0.015
VGS = 10 V
Coss
210
0.010
Crss
0.005
0
0
10
20
30
40
50
0
6
12
18
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.65
VDS = 8 V
RDS(on) - On-Resistance (Normalized)
ID = 14.4 A
8
6
VDS = 15 V, 24 V
4
2
0
0
24
ID - Drain Current (A)
10
VGS - Gate-to-Source Voltage (V)
420
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
8
10
30
VGS = 10 V, 14.4 A
VGS = 4.5 V, 13 A
1.4
1.15
0.9
0.65
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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VBQF1310
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.025
100
R DS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 15 A
TJ = 150 °C
10
TJ = 25 °C
1
0.020
0.015
0.010
0.005
0.1
0.0
0.3
0.6
0.9
1.2
TJ = 25 °C
0.000
0
VSD - Source-to-Drain Voltage (V)
1
2
3
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
200
1.85
ID = 250 μA
160
Power (W)
1.35
1.10
0.85
0.60
- 50
120
80
40
- 25
0
25
50
75
100
125
0
0.001
150
TJ - Temperature (°C)
0.1
Single Pulse Power
100
Limited by IDM
Limited by RDS(on)*
10
100 μs
1 ms
1
10 ms
100 ms
10 s, 1 s
0.1
DC
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
0.01
1
Single Pulse Power, Junction-to-Ambient
Time (s)
Threshold Voltage
ID - Drain Current (A)
VGS(th) (V)
1.60
10
VBQF1310
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
35
20
Package
Limited
15
Power (W)
ID - Drain Current (A)
28
21
10
14
5
7
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating a
125
150
0
25
50
75
100
TC - Case Temperature (°C)
125
150
Power, Junction-to-Case
Note
a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
5
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 69 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
6
1
VBQF1310
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7
VBQF1310
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