ME45P04

ME45P04/ME45P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME45P04-G is the P-Channel logic enhancement mode power ● RDS(ON)≦18mΩ@VGS=-10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦25mΩ@VGS=-4.5V trench technology. This high density process is especially tailored to ● Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited ● Exceptional on-resistance and maximum DC current for low voltage application such as cellular phone and notebook capability computer power management and other battery powered circuits , APPLICATIONS and low in-line power loss are needed in a very small outline surface ● Power Management in Note book ● DC/DC Converter mount package. ● Load Switch ● LCD Display inverter PIN CONFIGURATION (TO-252) Top View * The Ordering Information: ME45P04 (Pb-free) ME45P04-G (Green product-Halogen free ) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Symbol Maximum Ratings Unit Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V Parameter TC=25℃ Continuous Drain Current* TC=70℃ Pulsed Drain Current -30 ID IDM TC=25℃ Maximum Power Dissipation* TC=70℃ Operating Junction Temperature Thermal Resistance-Junction to Case* 2 *The device mounted on 1in FR4 board with 2 oz copper Mar, 2012-Ver1.3 A -23 -120 A 25 PD W 16 TJ -55 to 150 ℃ RθJC 5 ℃/W D CC 正式發行 01 ME45P04/ME45P04-G P- Channel 40-V (D-S) MOSFET Electrical Characteristics (TC =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min VGS=0V, ID=-250μA -40 -1.5 Typ Max Unit STATIC V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA IGSS Gate Leakage Current IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-State Resistance VSD Diode Forward Voltage a V -3 V VDS=0V, VGS=±20V ±100 nA VDS=-40V, VGS=0V -1 μA VGS=-10V, ID= -12A 15 18 VGS=-4.5V, ID= -6A 18 25 IS=-1.7A, VGS=0V -0.78 -1.2 mΩ V DYNAMIC Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Ciss Input capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 85 td(on) tr td(off) tf Turn-On Delay Time 48 Turn-On Rise Time Turn-Off Delay Time 25 VDS=-20V, VGS=-4.5V, ID=-12A nC 11 9.5 2760 VDS=-20V, VGS=0V, F=1MHz VDD=-15V, RL =15Ω ID=-1A, VGEN=-10V, RG=6Ω Turn-Off Fall Time 260 pF 24 ns 88 34 Notes:a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2% b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. D CC 正式發行 Mar, 2012-Ver1.3 02 ME45P04/ME45P04-G P- Channel 40-V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) D CC 正式發行 Mar, 2012-Ver1.3 03 ME45P04/ME45P04-G P- Channel 40-V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) D CC 正式發行 Mar, 2012-Ver1.3 04 ME45P04/ME45P04-G P- Channel 40-V (D-S) MOSFET TO-252 Package Outline SYMBOL MIN MAX A 2.10 2.50 B 0.40 0.90 C 0.40 0.90 D 5.30 6.30 D1 2.20 2.90 E 6.30 6.75 E1 4.80 5.50 L1 0.90 1.80 L2 0.50 1.10 L3 0.00 0.20 H 8.90 10.40 P Mar, 2012-Ver1.3 2.30 BSC D CC 正式發行 05