BAS70-04

BAS70 SCHOTTKY BARRIER DIODE 627 )($785(6 Low turn-on voltage z Fast switching Also available in lead free version z z BAS70 Marking: 73 BAS70-04 Marking: 74 BAS70-05 Marking: 75 BAS70-06 Marking: 76 0$;,0805$7,1*6#7D Я  6\PERO 3DUDPHWHU 9DOXH 8QLW 95 DC Voltage 70 V ,) Forward Continuous Current 70 mA IFSM Non-Repetitive Peak Forward Surge Current @ t = 8.3ms 100 mA 3' Power Dissipation 200 mW RθJA Thermal Resistance Junction to Ambient 500 Я/W 7- Junction Temperature 125 Я Storage Temperature -55~+150 Я  7VWJ (/(&75,&$/&+$5$&7(5,67,&67D ЯXQOHVVRWKHUZLVHVSHFLILHG           3DUDPHWHU 5HYHUVHEUHDNGRZQYROWDJH 6\PERO V(BR)   7HVW FRQGLWLRQV IR= 10µA  0LQ  0D[ 70 8QLW V 5HYHUVHYROWDJHOHDNDJ HFXUUHQW IR VR=50V 100 nA )RUZDUG YROWDJH VF IF=1mA IF=15mA 410 1000 mV 'LRGHFDS DFLWDQFH CD VR=0V f=1MHz 2 pF 5HYHUHVUHFRYHU\WLPH trr 5 ns   www.slkormicro.com IF=IR=10mA,Irr=0.1xIR, RL=100Ω 1 BAS70 Forward 100 Characteristics Pulsed Ta=100℃ (uA) REVERSE CURRENT IR a T IF =1 00 ℃ (mA) 10 FORWARD CURRENT Characteristics Reverse 10 Pulsed T= a 2 5℃ 1 0.1 0.01 0.0 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 0.1 Ta=25℃ 0.01 1.0 0 10 20 (V) 30 40 REVERSE VOLTAGE 50 60 70 (V) VR Power Derating Curve Capacitance Characteristics 3.0 1 300 Ta=25℃ 250 (mW) PD 2.0 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 2.5 1.5 1.0 150 100 50 0.5 0.0 200 0 5 10 REVERSE VOLTAGE www.slkormicro.com 15 VR 0 20 0 25 50 2 100 75 AMBIENT TEMPERATURE (V) Ta (℃ ) 125 BAS70 Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.slkormicro.com 3 Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8°