SLESD3B5CM

SLESD3B5CM Low Capacitance Bidirectional TVS/ESD Protection Diode DESCRIPTION FEATURES The SLESD3B5CM is designed to protect voltage  IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) sensitive components from ESD and transient  IEC61000-4-4 (EFT) 40A (5/50ηs) voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts  Peak power dissipation: 400W (8/20μs)  Protects one directional I/O line ideal for ESD protection on designs where board space is at a premium. Because of its small size, it  Low clamping voltage  Working voltages : 5V is suited for use in cellular phones, portable  Low leakage current devices, digital cameras, power supplies and many other portable applications where board space comes at a premium. Also because of its low capacitance, it is suited for use in high frequency designs such as USB 2.0 high speed, VGA, DVI, SDI and other high speed line applications. This device has been specifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused by ESD(electrostatic discharge), and EFT (electrical fast transients).  Low capacitance MACHANICAL DATA  SOD-323 package  Terminals: Gold plated, solderable per MIL-STD-750, method 2026  Packaging: Tape and Reel  Reel size: 7 inch  Weight: 0.001 gram (approx.)  MSL 1  Quantity per reel: 3,000pcs APPLICATIONS  High Speed Line :USB1.0/2.0, VGA, DVI, SDI,  Serial and Parallel Ports  Notebooks, Desktops, Servers  Projection TV  Cellular handsets and accessories  Portable instrumentation  Peripherals PIN CONFIGURATION www.slkormicro.com PACKAGE OUTLINE 1 SLESD3B5CM ABSOLUTE MAXIMUM RATING Symbol Parameter Value Units ESD per IEC 61000-4-2 (Air) ±15 ESD per IEC 61000-4-2 (Contact) ±8 PPP Peak Pulse Power (8/20μs) 400 W TOPT Operating Temperature -55~150 °C TSTG Storage Temperature -55~150 °C VESD kV ELECTRICAL CHARACTERISTICS (Tamb=25°C) Symbol Parameter Max Units VRWM Reverse Working Voltage 5.0 V VBR Reverse Breakdown Voltage IT = 1mA 7.8 V IR Reverse Leakage Current VRWM = 5V 1.0 μA VC Clamping Voltage IPP = 1A, tp = 8/20μs 9.8 V VC Clamping Voltage IPP = 25A, tp = 8/20μs 15 20 V CJ Junction Capacitance VR = 0V, f = 1MHz 30 40 pF www.slkormicro.com Test Condition 2 Min Typ 5.8 SLESD3B5CM ELECTRICAL CHARACTERISTICS CURVE SOD-323 PACKAGE OUTLINE DIMENSIONS www.slkormicro.com 3