SS26B

SS22B-SS210B SURFACE MOUNT SCHOTTKY BARRIER DIODES VOLTAGE RANGE: 20 - 100V CURRENT: 2.0 A Features ! ! ! ! ! Schottky Barrier Chip Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency For Use in Low Voltage Application Guard Ring Die Construction B Mechanical Data ! ! ! ! ! SMB(DO-214AA) A Case: SMB/DO-214AA, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.093 grams (approx.) C D J H Maximum Ratings and Electrical Characteristics G E Dim Min Max A 3.30 3.94 B 4.06 4.70 C 1.91 2.21 D 0.15 0.31 E 5.00 5.59 G 0.10 0.20 H 0.76 1.52 J 2.00 2.62 All Dimensions in mm TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL(see fig.1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 2.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction temperature range Storage temperature range Symbol SS22B SS23B SS24B SS25B SS26B SS28B SS210B VRRM VRMS VDC 30 21 30 40 28 40 50 35 50 60 42 60 80 56 80 100 70 100 V V V I(AV) 2.0 A IFSM 50.0 A VF 0.50 0.85 0.70 0.5 IR 20 10 CJ RθJA 220 TJ, TSTG -65 to +125 180 75.0 -65 to +150 Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas www.slkormicro.com 20 14 20 Unit 1 -65 to +150 V mA pF C/W C C FIG. 1- FORWARD CURRENT DERATING CURVE FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 2.0 1.6 Single Phase Half Wave 60Hz Resistive or inductive Load 1.2 0.8 SS22B-SS24B SS25B-SS210B 0.4 0 0 25 50 75 50 £PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES SS22B-SS210B 100 125 150 40 30 20 10 175 0 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 1 10 AMBIENT TEMPERATURE, C 100 NUMBER OF CYCLES AT 60 Hz FIG. 4-TYPICAL REVERSE CHARACTERISTICS FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 1,000 INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES TJ=25 C INSTANTANEOUS FORWARD CURRENT,AMPERES 10.0 1 SS22B-SS24B SS25B-SS26B SS28B-SS210B 0.1 100 TJ=100 C 10 TJ=75 C 1 0.1 TJ=25 C 0.01 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 20 40 60 80 100 PERCENT OF PEAK REVERSE VOLTAGE,% 1.6 INSTANTANEOUS FORWARD VOLEAGE, VOLTS FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE, C/W FIG. 5-TYPICAL JUNCTION CAPACITANCE 2000 JUNCTION CAPACITANCE, pF 1000 TJ=25 C 100 SS22B-SS24B SS25B-SS210B 100 10 1 0.1 0.01 0.1 1 10 10 0.1 1.0 10 100 REVERSE VOLTAGE,VOLTS www.slkormicro.com t,PULSE DURATION,sec. 2 100