WNM2020-3/TR

WNM2020 WNM2020 Http://www.sh-willsemi.com N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) (ȍ) D 0.220@ VGS=4.5V 20 0.260@ VGS=2.5V S 0.320@ VGS=1.8V G SOT-23 Descriptions The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) D 3 with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2020 is Pb-free and Halogen-free. 1 G 2 S Features Pin configuration (Top view) z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-23 3 W28* 2 1 W28 = Device Code * Applications = Month (A~Z) Marking Order information z DC-DC converter circuit z Small Signal Switch z Load Switch z Level Shift Device Package Shipping WNM2020-3/TR SOT-23 3000/Reel&Tape z Will Semiconductor Ltd. 1 2015/08/25 – Rev. 1.5 WNM2020 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±6 Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C ID PD ID PD Unit V 0.90 0.83 0.72 0.66 0.38 0.32 0.24 0.20 0.79 0.71 0.63 0.57 0.29 0.24 0.19 0.15 A W A W Pulsed Drain Current c IDM 1.4 A Operating Junction Temperature TJ -55 to 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ” 10 s Steady State t ” 10 s Steady State Steady State RșJA RșJA RșJC Typical Maximum 270 325 320 385 360 420 425 520 260 300 a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature TJ=150°C. Will Semiconductor Ltd. 2 Unit °C/W 2015/08/25 – Rev. 1.5 WNM2020 Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS =16 V, VGS Gate-to-source Leakage Current IGSS VDS = 0 V, VGS =±5V VGS(TH) VGS = VDS, ID = 250uA 20 V =0V 1 uA ±5 uA 0.58 0.85 V VGS = 4.5V, ID = 0.55A 220 310 VGS = 2.5V, ID = 0.45A 260 360 VGS = 1.8V, ID = 0.35A 320 460 VDS = 5 V, ID = 0.55A 2.0 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Forward Transconductance RDS(on) gFS 0.45 mŸ S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS 50 Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 10 V, 0.06 Gate-to-Source Charge QGS ID = 0.55A 0.15 Gate-to-Drain Charge QGD VGS = 0 V, f = 100 kHz, VDS = pF 13 10 V 8 1.15 nC 0.23 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) 22 Rise Time tr VDD=10V, Turn-Off Delay Time td(OFF) ID =0.55A, RG=6Ω Fall Time tf 80 VGS=4.5V, ns 700 380 BODY DIODE CHARACTERISTICS Forward Voltage Will Semiconductor Ltd. VSD VGS = 0 V, IS = 0.35A 3 0.5 0.7 1.5 V 2015/08/25 – Rev. 1.5 WNM2020 Typical Characteristics (Ta=25oC, unless otherwise noted) 2.0 VGS= 2.5V ~5.0V IDS-Drain to Source Current(A) IDS-Drain-to-Source Current (A) 4 VGS=2.0V 3 2 VGS=1.5V 1 0 0.0 0.4 0.8 1.2 1.6 VDS=5V 1.6 o T=-50 C 1.2 o T=25 C o T=125 C 0.8 0.4 0.0 0.0 2.0 0.4 Output characteristics 1.6 2.0 1600 350 RDS(on)- On-Resistance (m:) RDS(on)- On-Resistance(m:) 1.2 Transfer characteristics 400 VGS=1.8V 300 250 VGS=2.5V 200 VGS=4.5V 150 100 0.4 0.8 1.2 1.6 1200 800 400 2.0 1.0 IDS-Drain-to-Source Current(A) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS-Gate-to-Source Voltage(V) On-Resistance vs. Drain current On-Resistance vs. Gate-to-Source voltage 320 0.8 VGS(TH) Gate Threshold Voltage (V) VGS=4.5V, ID=0.55A RDS(on)- On-Resistance (m:) 0.8 VGS-Gate-to-Source Voltage(V) VDS-Drain-to-Source Voltage(V) 280 240 200 160 120 -50 -25 0 0.7 0.6 0.5 0.4 0.3 0.2 -50 25 50 75 100 125 150 o Temperature( C) On-Resistance vs. Junction temperature Will Semiconductor Ltd. ID=250uA -25 0 25 50 75 100 125 150 o Temperature ( C) Threshold voltage vs. Temperature 4 2015/08/25 – Rev. 1.5 WNM2020 60 0.8 F=100kHz 50 C - Capacitance(pF) ISD-Source to Drain Current(A) VGS=0V 40 Ciss Coss Crss 30 20 10 0 0 2 4 6 8 10 0.6 o T=150 C o 0.4 T=25 C 0.2 0.1 0.2 VDS Drain-to-Source Voltage (V) Capacitance 0.3 0.4 0.5 0.6 0.7 0.8 VSD-Source-to-Drain Voltage(V) 0.9 Body diode forward voltage ID - Drain Current (A) 10 1 10 ms 100 ms 0.1 Limited by RDS(on) 1s 10 s DC 0.01 TA = 25 °C Single Pulse 0.001 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 Safe operating power 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 320 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Transient thermal response (Junction-to-Ambient) Will Semiconductor Ltd. 5 2015/08/25 – Rev. 1.5 WNM2020 Package outline dimensions SOT-23 Symbol Dimensions in millimeter Min. Typ. Max. A 0.900 1.025 1.150 A1 0.000 0.050 0.100 A2 0.900 0.975 1.050 b 0.300 0.400 0.500 c 0.080 0.115 0.150 D 2.800 2.900 3.000 E 1.200 1.300 1.400 E1 2.250 2.400 2.550 1.900 2.000 e e1 0.950TYP 1.800 L 0.550REF L1 0.300 0.500 © 0e 8e Will Semiconductor Ltd. 6 2015/08/25 – Rev. 1.5