ESD5311Z-2/TR

厂商：
WILLSEMI(韦尔)
封装：
DFN-0603-2L
描述：
TVS二极管 VRWM=5V VBR(Min)=7.5V VC=21V IPP=4A Ppk=84W DFN0603-2L

数据手册：

下载ESD5311Z-2/TR.pdf

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详情介绍
数据手册
价格&库存

ESD5311Z-2/TR 数据手册

ESD5311Z ESD5311Z 1-Line, Bi-directional, Ultra-low Capacitance http//:www.sh-willsemi.com Transient Voltage Suppressor Descriptions The ESD5311Z is an ultra-low capacitance TVS (Transient Voltage Suppressor) designed to protect high speed data interfaces. It has been specifically designed to protect sensitive electronic components which are connected to data DFN0603-2L (Bottom View) and transmission lines from over-stress caused by ESD (Electrostatic Discharge). The ESD5311Z incorporates one pair of ultra-low capacitance steering diodes plus a TVS diode. The ESD5311Z may be used to provide ESD protection up to ±20kV (contact discharge) according to IEC61000-4-2, and Pin2 Pin1 withstand peak pulse current up to 4A (8/20μs) according to IEC61000-4-5. The ESD5311Z is available in DFN0603-2L package. Standard products are Pb-free and Halogen-free. Pin configuration Features  Stand-off voltage: 5V Max.  Transient protection for each line according to *D Pin1 Pin2 IEC61000-4-2 (ESD): ±20kV (contact discharge) IEC61000-4-4 (EFT): 40A (5/50ns) IEC61000-4-5 (surge): 4 A (8/20μs) D = Device code  Ultra-low capacitance: CJ = 0.25pF typ. * = Month code  Ultra-low leakage current: IR < 1nA typ.  Low clamping voltage: VCL = 21V typ. @ IPP = 16A (TLP)  Small package Marking (Top View) Applications  USB 2.0 and USB 3.0  HDMI 1.3 and HDMI 1.4  SATA and eSATA  DVI  IEEE 1394  PCI Express  Portable Electronics  Notebooks Will Semiconductor Ltd. Order information Device Package Shipping ESD5311Z-2/TR DFN0603-2L 10000/Tape&Reel 1 Revision 1.4, 2018/04/23 ESD5311Z Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 84 W Peak pulse current (tp = 8/20μs) IPP 4 A ESD according to IEC61000-4-2 air discharge ±20 VESD ESD according to IEC61000-4-2 contact discharge Junction temperature TJ Operating temperature TOP Lead temperature TL Storage temperature kV ±20 TSTG 125 o -40~85 o 260 o -55~150 o C C C C Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Reverse maximum working voltage VRWM Reverse leakage current Reverse breakdown voltage Clamping voltage 1) Dynamic resistance 1) IR IT = 1mA VCL IPP = 16A, tp = 100ns RDYN 2) VCL Clamping voltage 3) VCL CJ Min. VRWM = 5V VBR Clamping voltage Junction capacitance Condition VESD = 8kV 7.5 Typ. Max. Unit 5.0 V

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ESD5311Z-2/TR

PDF文档中提到的物料型号是ESD5311Z，它是一种超低电容的瞬态电压抑制器（TVS），专为保护高速数据接口而设计。

以下是该器件的相关信息：

器件简介： - 用于保护与数据和传输线连接的敏感电子元件，防止由静电放电（ESD）引起的过应力。

引脚分配： - 该器件采用DFN0603-2L封装，具有两个引脚（Pin1和Pin2）。

参数特性： - 典型待机电压：5V - 每个线路的瞬态保护：IEC61000-4-2（ESD）±20kV（接触放电）、IEC61000-4-4（EFT）40A（5/50ns）、IEC61000-4-5（浪涌）4A（8/20μs） - 超低电容：典型值0.25pF - 超低漏电流：典型值小于1nA - 低钳位电压：典型值21V（在16A的峰值脉冲电流下）

功能详解： - 该器件结合了一对超低电容导向二极管和TVS二极管，可以提供高达±20kV的ESD保护，并承受高达4A的峰值脉冲电流。

应用信息： - 适用于USB 2.0和USB 3.0、HDMI 1.3和HDMI 1.4、SATA和eSATA、DVI、IEEE 1394、PCI Express、便携式电子设备和笔记本电脑。

封装信息： - 标准产品无铅无卤素。

- 封装类型：DFN0603-2L，10000/卷轴包装。

更多详细信息和推荐PCB布局可在文档中找到。

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