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DB3W

DB3W

  • 厂商:

    JINGDAO(晶导微电子)

  • 封装:

    SOD123FL

  • 描述:

    反向耐压28V 反向恢复时间2μs

  • 数据手册
  • 价格&库存
DB3W 数据手册
山东晶导微电子有限公司 DB3W / DC34W / DB4W Jingdao Microelectronics Silicon Bidirectional Trigger Diodes PINNING FEATURES These diacs are intended for use in thyristor phase control. circuits for lamp-dimming. universal-motor speed controls. and heat controls. PIN MECHANICAL DATA ▪Case: SOD-123FL ▪Terminals: Solderable per MIL-STD-750, Method 2026 ▪Approx. Weight:15mg 0.00048oz DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: DB3W / DC34W / DB4W Simplified outline SOD-123FL and symbol Absolute Maximum Ratings (Ta = 25°C ) Symbol Value Unit Power Dissipation (T C = 100°C ) P tot 150 mW Repetitive Peak On-state Current (tp = 20 µs, f = 100 Hz) I TRM 2 A T j , T stg - 40 to + 125 °C Parameter Operating Junction and Storage Temperature Range Characteristics at T a = 25°C Symbol Parameter DB3W Min. Max. Unit 28 36 V 30 38 V 35 45 V - 3 V Breakover Voltage at C = 22 nF, see diagram 1 DC34W V BO DB4W Breakover Voltage Symmetry at C = 22 nF, see diagram 1 Dynamic Breakover Voltage at △I = [I BO to I F = 10 mA] [|+V BO |-|- V BO |] | △V ± | Output Voltage See diagram 2 VO Breakover Current at C = 22 nF I BO Leakage Current at V B =0.5V BO max IB Rise Time See diagram 3 tr 2016.01 5 5 - SOD123FL-DB-DB3W~DB4W-150mW - V V 50 μA 10 μA 2 μs Page 1 of 3 山东晶导微电子有限公司 DB3W / DC34W / DB4W Jingdao Microelectronics Diagram2: Test circuit for output voltage △ △ Diagram1: current-voltage characteristice 10KΩ + IF IO D.U.T R=20Ω 0.1μF (10mA) VO I BO IB -V 500KΩ 220V 50Hz +V 0 0.5V BO Diagram3 : Test circuit see Fig.2 . Adjust R for lp=0.5A △V VO V BO 90% - IF 10% tr Fig.2: Power dissipation versus ambient temperapture(maximum values) VBO[Tj] VBO[Tj=25°C ] 150 120 90 60 30 0 25 50 75 100 125 150 RELATIVE VARIATION OF V BO P,POWER DISSIPATION,mW Fig.1: Power dissipation versus ambient temperapture(maximum values) 1.08 1.06 1.04 1.02 1.00 25 CASE TEMPERATURE,°C T J (°C) 50 75 100 125 T j,JUNCTION TEMPERATURE, °C Fig.3: Power dissipation versus ambient temperapture(maximum values) I TRM,PEAK PULSE CURRENT,A 10 1 0.1 0.01 10 100 1000 10000 tp,PULSE DURATION,µs 2016.01 www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 DB3W / DC34W / DB4W Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123FL ∠ALL ROUND C A ∠ALL ROUND VM D E A g Top View mil Bottom View A C D E e g HE max 1.1 0.20 2.9 1.9 1.1 0.9 3.8 min 0.9 0.12 2.6 1.7 0.8 0.7 3.5 max 43 7.9 114 75 43 35 150 min 35 4.7 102 67 31 28 138 UNIT mm g pad e E A pad HE 7° The recommended mounting pad size Marking Type number 2.0 (79) 1.2 (47) Marking code DB3W DB3W DC34W DC34W DB4W DB4W 1.2 (47) 1.2 (47) ∠ Unit: mm (mil) 2016.01 www.sdjingdao.com Page 3 of 3

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DB3W
  •  国内价格
  • 1+0.06174
  • 100+0.05754
  • 300+0.05334
  • 500+0.04914
  • 2000+0.04704
  • 5000+0.04578

库存:297