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MM1Z3V9B

MM1Z3V9B

  • 厂商:

    JINGDAO(晶导微电子)

  • 封装:

    SOD-123

  • 描述:

    齐纳二极管 Vz=3.9V 3.82V~3.98V Izt=5mA P=500mW SOD123

  • 数据手册
  • 价格&库存
MM1Z3V9B 数据手册
山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MM1Z2V0B THRU MM1Z75B Silicon Planar Zener Diodes PINNING PIN FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±2% DESCRIPTION 1 Cathode 2 Anode 2 1 MECHANICAL DATA ▪Case: SOD-123 ▪Terminals: Solderable per MIL-STD-750, Method 2026 ▪ Approx. Weight:16mg/0.00056oz Simplified outline SOD-123 and symbol Absolute Maximum Ratings And Characteristics (Ta = 25 °C) Symbol Value Unit Power Dissipation P tot 500 mW Forward Voltage at I F = 10 mA VF 0.9 V RθJA 340 °C/W T j , T stg -55 ~ +150 °C Parameter Typical thermal resistance juncting to ambient Operating and Storage Temperature Range (1) Fig.1 Maximum Continuous Power Derating 0.6 Power Dissipation ( W ) 0.5 0.4 0.3 0.2 0.1 0.0 25 50 75 100 125 150 T c ,Case Temperature (°C) 2017.12 175 Transient Thermal Impedance( °C /W) (1) Thermal resistance from junction to ambient at P.C.B. mounted with 2 .0" X 2.0" (5 X 5 cm) copper areas pads. Fig.2 Typical Transient Thermal Impedance 2000 1000 100 10 0.01 0.1 1 10 100 t, Pulse Duration(sec) SOD123-W-MM1Z2V0B~MM1Z75B-500mW Page 1 of 3 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MM1Z2V0B THRU MM1Z75B Characteristics at Ta = 25°C Dynamic Impedance Zener Voltage Range (1) Type Marking V ZT(at I ZT) Min(V) Reverse Current I ZT Z ZT(at I ZT) IR at V R Max(μA) (V) Nom(V) Max(V) (mA) Max (Ω) MM1Z2V0B 4A 1.96 2 2.04 5 100 120 0.5 MM1Z2V2B 4B 2.16 2.2 2.24 5 100 120 0.7 MM1Z2V4B 4C 2.35 2.4 2.45 5 100 120 1 MM1Z2V7B 4D 2.65 2.7 2.75 5 110 120 1 MM1Z3V0B 4E 2.94 3 3.06 5 120 50 1 MM1Z3V3B 4F 3.23 3.3 3.37 5 130 20 1 MM1Z3V6B 4H 3.53 3.6 3.67 5 130 10 1 MM1Z3V9B 4J 3.82 3.9 3.98 5 130 5 1 MM1Z4V3B 4K 4.21 4.3 4.39 5 130 5 1 4.7 4.79 MM1Z4V7B 4M 4.61 5 130 2 1 MM1Z5V1B 4N 5 5.1 5.20 5 130 2 1.5 MM1Z5V6B 4P 5.49 5.6 5.71 5 80 1 2.5 MM1Z6V2B 4R 6.08 6.2 6.32 5 50 1 3 MM1Z6V8B 4X 6.66 6.8 6.94 5 30 0.5 3.5 MM1Z7V5B 4Y 7.35 7.5 7.65 5 30 0.5 4 MM1Z8V2B 4Z 8.04 8.2 8.36 5 30 0.5 5 MM1Z9V1B 5A 8.92 9.1 9.28 5 30 0.5 6 MM1Z10B 5B 9.8 10 10.2 5 30 0.1 7 MM1Z11B 5C 10.78 11 11.22 5 30 0.1 8 11.76 12 12.24 5 35 0.1 9 0.1 10 0.1 11 MM1Z12B 5D MM1Z13B 5E 12.74 13 13.26 5 35 MM1Z15B 5F 14.7 15 15.3 5 40 MM1Z16B 5H 15.68 16 16.32 5 40 0.1 12 MM1Z18B 5J 17.64 18 18.36 5 45 0.1 13 MM1Z20B 5K 19.6 20 20.4 5 50 0.1 15 MM1Z22B 5M 21.56 22 22.44 5 55 0.1 17 MM1Z24B 5N 23.52 24 24.48 5 60 0.1 19 MM1Z27B 5P 26.46 27 27.54 5 70 0.1 21 MM1Z30B 5R 29.4 30 30.6 5 80 0.1 23 MM1Z33B 5X 32.34 33 33.66 5 80 0.1 25 35.28 36 36.72 5 90 0.1 27 2.5 100 MM1Z36B 5Y MM1Z39B 5Z 38.22 39 39.78 2 30 MM1Z43B 6A 42.14 43 43.86 2.5 130 2 33 MM1Z47B 6B 46.06 47 47.94 2.5 150 2 36 MM1Z51B 6C 49.98 51 52.02 2.5 180 1 39 MM1Z56B 6D 54.88 56 57.12 2.5 180 1 43 MM1Z62B 6E 60.76 62 63.24 2.5 200 0.2 47 MM1Z68B 6F 66.64 68 69.36 2.5 250 0.2 52 MM1Z75B 6H 73.5 75 76.5 2.5 300 0.2 57 (1) V ZT is tested with pulses (20 ms) 2017.12 www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 MM1Z2V0B THRU MM1Z75B Jingdao Microelectronics co.LTD PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 A D b E A1 C ∠ALL ROUND L1 E1 SOD-123 mechanical data A C D E E1 L1 b A1 max 1.3 0.22 1.8 2.8 3.9 0.45 0.7 0.2 min 0.9 0.09 1.5 2.5 3.6 0.25 0.5 max 51 8.7 71 110 154 18 28 min 35 3.5 59 98 142 10 20 UNIT ∠ mm 9° 8 mil The recommended mounting pad size 2.0 (79) 1.2 (47) 1.2 (47) 1.2 (47) Unit: mm (mil) 2017.12 www.sdjingdao.com Page 3 of 3
MM1Z3V9B 价格&库存

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MM1Z3V9B
    •  国内价格
    • 1+0.08450

    库存:10

    MM1Z3V9B
    •  国内价格
    • 1+0.03064
    • 100+0.02857
    • 300+0.02650
    • 500+0.02443
    • 2000+0.02339
    • 5000+0.02277

    库存:2782