MM3Z8V2B

山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MM3Z2V0B THRU MM3Z75B Silicon Planar Zener Diodes PINNING PIN FEATURES • Total power dissipation: Max. 300mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±2% DESCRIPTION 1 Cathode 2 Anode 2 1 MECHANICAL DATA ▪Case: SOD-323 ▪Terminals: Solderable per MIL-STD-750, Method 2026 ▪A pprox. Weight: 5.48mg / 0.00019oz Top View Simplified outline SOD-323 and symbol Absolute Maximum Ratings And Characteristics （Ta = 25 °C） Symbol Value Unit Power Dissipation P tot 300 mW Forward Voltage at I F = 10 mA VF 0.9 V RθJA 417 °C/W T j , T stg -55 ~ +150 °C Parameter Typical thermal resistance juncting to ambient Operating and Storage Temperature Range (1) Fig.1 Maximum Continuous Power Derating 0.35 Power Dissipation ( W ) 0.3 0.25 0.2 0.15 0.1 0.05 0.0 25 50 75 100 125 150 T c ,Case Temperature (°C) 2017.12 175 Transient Thermal Impedance（ °C /W） (1) Thermal resistance from junction to ambient at P.C.B. mounted with 2 .0" X 2.0" (5 X 5 cm) copper areas pads. Fig.2 Typical Transient Thermal Impedance 2000 1000 100 10 0.01 0.1 1 10 100 t, Pulse Duration（sec） SOD323-W-MM3Z2V0B~MM3Z75B-300mW Page 1 of 3 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MM3Z2V0B THRU MM3Z75B Characteristics at Ta = 25°C Zener Voltage Range （1） I ZT Type Marking V ZT（at I ZT） Min（V） Nom（V） Max（V） (mA) Dynamic Impedance Reverse Current Z ZT（at I ZT） IR at V R Max (Ω) Max（μA） （V） MM3Z2V0B B0 1.96 2.0 2.04 5 100 120 0.5 MM3Z2V2B C0 2.16 2.2 2.24 5 100 120 0.7 MM3Z2V4B 1C 2.35 2.4 2.45 5 100 120 1 MM3Z2V7B 1D 2.65 2.7 2.75 5 110 120 1 MM3Z3V0B 1E 2.94 3.0 3.06 5 120 50 1 MM3Z3V3B 1F 3.23 3.3 3.37 5 130 20 1 MM3Z3V6B 1H 3.53 3.6 3.67 5 130 10 1 MM3Z3V9B 1J 3.82 3.9 3.98 5 130 5 1 MM3Z4V3B 1K 4.21 4.3 4.39 5 130 5 1 MM3Z4V7B 1M 4.61 4.7 4.79 5 130 2 1 MM3Z5V1B 1N 5 5.1 5.2 5 130 2 1.5 MM3Z5V6B 1P 5.49 5.6 5.71 5 80 1 2.5 MM3Z6V2B 1R 6.08 6.2 6.32 5 50 1 3 MM3Z6V8B 1X 6.66 6.8 6.94 5 30 0.5 3.5 MM3Z7V5B 1Y 7.35 7.5 7.65 5 30 0.5 4 MM3Z8V2B 1Z 8.04 8.2 8.36 5 30 0.5 5 MM3Z9V1B 2A 8.92 9.1 9.28 5 30 0.5 6 MM3Z10B 2B 9.8 10 10.2 5 30 0.1 7 MM3Z11B 2C 10.78 11 11.22 5 30 0.1 8 MM3Z12B 2D 11.76 12 12.24 5 35 0.1 9 MM3Z13B 2E 12.74 13 13.26 5 35 0.1 10 MM3Z15B 2F 14.7 15 15.3 5 40 0.1 11 MM3Z16B 2H 15.68 16 16.32 5 40 0.1 12 MM3Z18B 2J 17.64 18 18.36 5 45 0.1 13 MM3Z20B 2K 19.6 20 20.4 5 50 0.1 15 MM3Z22B 2M 21.56 22 22.44 5 55 0.1 17 MM3Z24B 2N 23.52 24 24.48 5 60 0.1 19 MM3Z27B 2P 26.46 27 27.54 2 70 0.1 21 MM3Z30B 2R 29.4 30 30.60 2 80 0.1 23 MM3Z33B 2X 32.34 33 33.66 2 80 0.1 25 0.1 27 MM3Z36B 2Y 35.28 36 36.72 2 90 MM3Z39B 2Z 38.22 39 39.78 2 100 0.1 30 MM3Z43B 3A 42.14 43 43.86 2 130 0.1 33 MM3Z47B 3B 46.06 47 47.94 2 150 0.1 36 MM3Z51B 3C 49.98 51 52.02 2 180 0.1 39 MM3Z56B 3D 54.88 56 57.12 2 200 0.1 43 MM3Z62B 3E 60.76 62 63.24 2 215 0.1 47 MM3Z68B 3F 66.64 68 69.36 2 240 0.1 52 MM3Z75B 3H 73.5 75 76.5 2 265 0.1 56 （1） V ZT is tested with pulses (20 ms) 2017.12 www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 MM3Z2V0B THRU MM3Z75B Jingdao Microelectronics co.LTD PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 E E D b A C A1 ∠ALL ROUND L1 E1 SOD-323 mechanical data A C D E E1 b L1 A1 max 1.1 0.15 1.4 1.8 2.75 0.4 0.45 0.2 min 0.8 0.08 1.2 1.4 2.55 0.25 0.2 max 43 5.9 55 70 108 16 16 min 32 3.1 47 63 100 9.8 7.9 UNIT ∠ mm 9° 8 mil The recommended mounting pad size 1.4 (55) 1.2 (47) 1.2 (47) 1.2 (47) Unit： mm (mil) 2017.12 www.sdjingdao.com Page 3 of 3