F10N65

山东晶导微电子股份有限公司 F10N65 Jingdao Microelectronics co.LTD 10A, 650V N-CHANNEL POWER MOSFET ITO-220ABW DESCRIPTION The F10N65 is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. PIN1 Features • R DS(ON) ≤ 1.0 Ω @ V GS =10V, I D =5.0A • Fast switching capability • Avalanche energy tested • Improved dv/dt capability, high ruggedness PIN2 PIN3 SYMBOL 2.Drain Mechanical data • Case: ITO-220ABW • A pprox. Weight: 2.1g ( 0.07oz) • Lead free finish, RoHS compliant • Case Material: “Green” molding compound, UL flammability classification 94V-0,“Halogen-free”. 1.Gate 3.Source ABSOLUTE MAXIMUM RATINGS (T A =25°C, unless otherwise specified) Symbols RATINGS Units Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V Continuous Drain Current ID 10 A Pulsed Drain Current (Note 2) I DM 20 A Avalanche Energy E AS 800 mJ dv/dt 2.1 V/ns PD 38 W T j, T stg -55 ~ +150 °C PARAMETER Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) Power Dissipation Operation Junction Temperature and Storage Temperature Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 100mH, IAS = 4.1A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA Symbols RATINGS Units Junction to Ambient R thJA 63 V Junction to Case R thJC 4 V PARAMETER Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2021.03 ITO-220ABW-MOS-F10N65-10A650V Page 1 of 8 山东晶导微电子股份有限公司 F10N65 Jingdao Microelectronics co.LTD ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) Symbols PARAMETER TEST CONDITIONS Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current BV DSS V DS =0V,I D =250uA I DSS V DS =650V,V GS =0V Forward I GSS Gate- Source Leakage Current Reverse 650 V 10 V GS =30V,V DS =0V 100 V GS =-30V,V DS =0V -100 uA nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =V GS ,I D =250uA Static Drain-Source On-State Resistance R DS(ON) V GS =10V,I D =5.0A 2.0 4.0 V 1.0 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS V DS =25V, 1530 pF Output Capacitance C OSS V GS =0V, 130 pF Reverse Transfer Capacitance C RSS f=1.0MHz 5 pF SWITCHING CHARACTERISTICS QG V DS =520V,V GS =10V, 31 nC Gate-Source Charge Q GS I D =10A,I G =1mA 7.6 nC Gate-Drain Charge Q GD (NOTE1,2) 5.8 nC t D(ON) V DS =100V,V GS =10V, 20 ns I D =10A,R G =25Ω 21 ns (NOTE1,2) 98 ns 35 ns Total Gate Charge (Note 1) Turn-On Delay Time (Note 1) Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time tR t D(OFF) tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS 10 A Maximum Body-Diode Pulsed Current I SM 20 A Drain-Source Diode Forward Voltage (Note 1) V SD I S =10A,V GS =0V 1.4 V trr I S =10A,V GS =0V, 376 ns Qrr di/dt=100A/us 8.5 uC Maximum Body-Diode Continuous Current Reverse Recovery Time (Note 1) Reverse Recovery Charge Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. 2021.03 www.sdjingdao.com Page 2 of 8 山东晶导微电子股份有限公司 F10N65 Jingdao Microelectronics co.LTD Test Circuits and waveforms + D.U.T V DS + I SD - RG V GS Driver V DD *dv/dt controlled by R G * I SD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T Peak Diode Recovery dv/dt Test Circuit Period V GS (Driver) D= P.W P.W Period V GS =10V I FM ,Body Diode Forward Current di/dt I SD (D.U.T) I RM Body Diode Reverse Current Body Diode Reverse Current V DS (D.U.T) V DD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms 2021.03 www.sdjingdao.com Page 3 of 8 山东晶导微电子股份有限公司 F10N65 Jingdao Microelectronics co.LTD Test Circuits and waveforms V DS RL V DS 90% V GS RG V DD 10% V GS Pulse Width≤ 1μs Duty Factor≤0.1% D.U.T t D(ON) Switching Test Circuit t D(OFF) tR tF Switching Waveforms V GS QG Same Type as D.U.T Q GS Q GD V DS V GS D.U.T Charge Gate Charge Test Circuit Gate Charge Waveform L V DS BV DSS I AS RD I D(t) V DD tP V DD D.U.T tP Unclamped Inductive Switching Test Circuit 2021.03 V DS(t) www.sdjingdao.com Time Unclamped Inductive Switching Waveforms Page 4 of 8 山东晶导微电子股份有限公司 F10N65 Jingdao Microelectronics co.LTD Typical Characteristics Fig.1 Drain Current vs. Gate-Source Voltage Fig.2 Drain-Source On-Resistance vs. Gate-Source Voltage Drain-Source On-Resistance, RDS(ON) (Ω) 18 TA=25°C Pulsed test 16 Drain Current, ID (A) 14 V GS =6~10V 12 10 8 V GS =5.5V 6 4 V GS =5V 2 V GS =4.5V 0 0 3 9 6 12 6 TA=25°C Pulsed test 5 4 3 2 I D =10A 1 I D =5.0A 0 15 2 0 Drain-Source Voltage, VDS (V) 10 10000 10 VDS=520V VGS=10V ID=10A Pulsed CISS 8.0 Capacitance, C (pF) Gate-Source Voltage, VGS (V) 8 Fig.4 Capacitance Characteristics Fig.3 Gate Charge Characteristics 6.0 4.0 1000 COSS 100 CRSS 10 2.0 0.0 0 10 5 15 20 25 30 5.0 35 10 Total Gate Charge, QG (nC) VGS=10V ID=5A Pulsed 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 20 25 30 35 40 45 50 Fig.6 Breakdown Voltage vs. Junction Temperature Drain-Source Breakdown Voltage Normalized 3.0 2.5 15 Drain-Source Voltage, VDS (V) Fig.5 Drain-Source On-Resistance vs. Junction Temperature Drain-Source On-Resistance Normalized 6 4 Gate-Source Voltage, VGS (V) 1.2 ID=0.25mA Pulsed 1.0 0.8 0.6 0.4 0.2 0 25 175 Junction Temperature, TJ (°C) 75 50 100 125 150 175 Junction Temperature, TJ (°C) Fig.8 Source Current vs. Source-Drain Voltage Fig.7 Gate Threshold Voltage vs. Junction Temperature ID=0.25mA Pulsed 0.5 0.25 °C 25 15 1.0 A= T 0.1 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) 2021.03 A= 0.75 T 1.0 0° C 1.25 Source Current, IS (A) Gate Threshold Voltage Normalized 10 www.sdjingdao.com 0 0.2 0.4 0.6 0.8 1.0 1.2 Source-Drain Voltage, VSD (V) Page 5 of 8 山东晶导微电子股份有限公司 F10N65 Jingdao Microelectronics co.LTD Typical Characteristics Fig.10 Drain-Source On-Resistance vs. Drain Current Drain-Source On-Resistance, RDS(ON) (Ω) Fig.9 Drain Current vs. Gate-Source Voltage 12 TA=25°C Pulsed Drain Current, ID (A) 10 8 6 4 2 0 2 6 4 8 10 12 4.0 TA=25°C VGS=10V Pulsed 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 2 14 4 Junction Temperature, TJ (°C) 6 8 10 12 14 Drain Current, ID (A) Fig.11 Power Dissipation vs. Junction Temperature Fig.12 Drain Current vs. Junction Temperature 60 Drain Current, ID (A) Power Dissipation, PD (W) 15 50 40 30 20 10 12 9.0 6.0 3.0 RESISTIVE OR INDUCTIVE LOAD 0 0.0 25 75 50 100 125 150 175 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) Junction Temperature, TJ (°C) Fig.13 Safe Operating Area 100 Drain Current, I (A) Max 100us 10 1ms 1.0 10ms DC 0.1 Operation in this area is limited by R DS (ON) TJ=150°C TC=25°C Single Pulse 0.01 1.0 10 100 1000 Drain-Source Voltage, VDS (V) 2021.03 www.sdjingdao.com Page 6 of 8 山东晶导微电子股份有限公司 F10N65 Jingdao Microelectronics co.LTD ITO-220ABW 0.413 (10.5) 0.388 (9.85) TYP 3.5 0.114 (2.9) 0.091 (2.3) 0.055 (1.4) 0.043 (1.1) 0.031 (0.8) 0.020 (0.5) 0.185 (4.7) 0.173 (4.4) 0.63 (16.0) 0.58 (14.7) 0.276 (7.0) 0.248 (6.3) 0.114 (2.9) 0.098 (2.5) 0.563 (14.3) 0.512 (13.0) 0.112 (2.85) 0.100 (2.54) PACKAGE OUTLINE Plastic surface mounted package; 3 leads 0.110 (2.8) 0.098 (2.5) 0.027 (0.70) 0.016 (0.41) TYP 2.54 1 2 Unit: inch (mm) 3 MARKING DIAGRAM C A B a Unmarkable Surfacea Marking Composition Field D a:Ejector Pin Mark A:Marking Area B: Lot Code C: Additional Information D:Date Code (YWW) Y:Years(0~9) WW:Week 2021.03 JD200808 Page 7 of 8 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD F10N65 Important Notice and Disclaimer Jingdao Microelectronics reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. Jingdao Microelectronics makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Jingdao Microelectronics assume any liability for application assistance or customer product design. Jingdao Microelectronics does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Jingdao Microelectronics. Jingdao Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of Jingdao Microelectronics. 2021.03 www.sdjingdao.com Page 8 of 8