山东晶导微电子有限公司
ES5ABF THRU ES5JBF
Jingdao Microelectronics
Surface Mount Superfast Recovery Rectifier
Reverse Voltage – 50 to 600 V
PINNING
Forward Current – 5 A
PIN
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Superfast reverse recovery time
• Lead free in comply with EU RoHS 2011/65/EU directives
DESCRIPTION
1
Cathode
2
Anode
1
2
Simplified outline SMBF and symbol
MECHANICAL DATA
• Case: SMBF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 57mg / 0.002oz
Absolute Maximum Ratings and Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols
ES5ABF
ES5BBF
ES5CBF
ES5DBF
ES5EBF
ES5GBF
ES5JBF
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
50
100
150
200
300
400
600
V
Maximum RMS voltage
V RMS
35
70
105
140
210
280
420
V
Maximum DC Blocking Voltage
V DC
50
100
150
200
300
400
600
V
Maximum Average Forward Rectified Current
at T c = 115 °C
I F(AV)
5
A
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
I FSM
150
A
Maximum Forward Voltage at 5A
VF
Parameter
Maximum DC Reverse Current
T a = 25 °C
at Rated DC Blocking Voltage
T a =125 °C
Typical Junction Capacitance
at V R =4V, f=1MHz
Maximum Reverse Recovery Time
(1)
Typical Thermal Resistance 2)
Operating and Storage Temperature Range
1.25
1.0
1.7
V
IR
10
100
μA
Cj
50
pF
t rr
35
ns
RθJA
RθJC
40
12
°C/W
T j , T stg
-55 ~ +150
°C
(1)Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A .
(2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2016.01
SMBF-E-ES5ABF~ES5JBF-5A600V
Page 1 of 3
山东晶导微电子有限公司
ES5ABF THRU ES5JBF
Jingdao Microelectronics
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
t rr
10 ohm
Noninductive
+0.5
D.U.T
+
PULSE
GENERATOR
Note 2
25Vdc
approx
0
-
-0.25
1 ohm
NonInductive
OSCILLOSCOPE
Note 1
-1.0
Note:1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
10ns/div
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
300
6
5
I R - Reverse Current ( μ A)
Average Forward Current (A)
Fig.2 Maximum Average Forward Current Rating
4
3
2
1
Single phase half-wave 60 Hz
resistive or inductive load
100
T J =125°C
10
T J =75°C
1.0
T J =25°C
0.1
0
25
50
75
100
125
150
175
20
0
40
Case Temperature (°C)
Junction Capacitance ( pF)
Instaneous Forward Current (A)
T J =25°C
1.0
ES5ABF~ES5DBF
ES5EBF/WS5GBF
0.1
80
100
Fig.5 Typical Junction Capacitance
Fig.4 Typical Forward Characteristics
10
60
% of PIV.VOLTS
ES5JBF
0.01
T J =25°C
100
10
T J=25°C
f = 1.0MHz
V sig = 50mV p-p
1
0.001
0
0.5
1.0
1.5
2.0
2.5
Instaneous Forward Voltage (V)
0.1
1.0
10
100
Reverse Voltage (V)
Peak Forward Surage Current (A)
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
175
150
125
100
75
50
25
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
Number of Cycles
2016.01
www.sdjingdao.com
Page 2 of 3
山东晶导微电子有限公司
ES5ABF THRU ES5JBF
Jingdao Microelectronics
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SMBF
∠ALL ROUND
C
A
∠ALL ROUND
D
E
A
V M
g
Top View
mil
Bottom View
A
C
D
E
HE
e
max
1.3
0.26
4.4
3.7
5.5
2.2
min
1.1
0.18
4.2
3.5
5.1
1.9
max
51
10
173
146
216
86
min
43
7
165
138
200
75
UNIT
mm
∠
9°
Type number
Marking code
1.8(71)
2.54(100)
3.0(118)
40
Marking
Unit:mm(mil)
2016.01
g
1.0
The recommended mounting pad size
1.8(71)
g
pad
e
E
A
pad
HE
JD512269B5
ES5ABF
E5AB
ES5BBF
E5BB
ES5CBF
E5CB
ES5DBF
E5DB
ES5EBF
E5EB
ES5GBF
E5GB
ES5JBF
E5JB
Page 3 of 3
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