山东晶导微电子有限公司
ABS1-10 THRU ABS10-10
Jingdao Microelectronics
1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
FEATURES:
PINNING
• Glass Passivated Chip Junction
• Reverse Voltage - 100 to 1000 V
PIN
DESCRIPTION
1
Input Pin(~)
• Forward Current - 1 A
2
Input Pin(~)
• High Surge Current Capability
3
Output Anode(+)
4
Output Cathode(-)
• Designed for Surface Mount Application
MECHANICAL DATA
• Case: ABS/LBF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 88mg / 0.0031oz
3
4
2
1
ABS/LBF Package
Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Symbols
ABS1-10
ABS2-10
ABS4-10
ABS6-10
Maximum Repetitive Peak Reverse Voltage
V RRM
100
200
400
600
800
1000
V
Maximum RMS voltage
V RMS
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
V DC
100
200
400
600
800
1000
V
Parameter
Average Rectified Output Current
at Ta = 50 °C
ABS8-10 ABS10-10 Units
IO
1
A
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
(JEDEC Method)
I FSM
35
A
Forward Voltage per element
@I F =1.0A
VF
1.1
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T A =100℃
IR
5
50
100
μA
Cj
13
pF
RθJA
RθJL
80
25
°C/W
T j , T stg
-55 ~ +150
°C
@ T A =25 °C
@ T A =125 °C
Typical Junction Capacitance(Note1)
Typical Thermal Resistance(Note2)
Operating and Storage Temperature Range
Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C.
2. Mounted on glass epoxy PC board with 4×(5×5mm 2 )copper pad.
2015.03
ABS-A-ABS10-10-1A1KV
Page 1 of 3
山东晶导微电子有限公司
ABS1-10 THRU ABS10-10
Jingdao Microelectronics
Fig.2 Typical Reverse Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
Resistive or Inductive Load
0.0
25
50
75
100
125
150
175
Instaneous Reverse Current(μ A)
Average Rectified Output Current (A)
Fig.1 Average Rectified Output Current
Derating Curve
100
T J =125°C
10
1.0
T J =25°C
0.1
00
T J =25°C
1.0
0.1
pulse with 300μs
1% duty cycle
0.01
0.0
40
60
80
100
120
140
Fig.4 Typical Junction Capacitance
Junction Capacitance ( pF)
Instaneous Forward Current (A)
Fig.3 Typical Instaneous Forward
Characteristics
10
20
percent of Rated Peak Reverse Voltage (%)
Ambient Temperature (°C)
100
T J =25°C
10
1
0.5
1.0
1.5
2.0
0.1
1.0
10
100
Reverse Voltage (V)
Instaneous Forward Voltage (V)
Peak Forward Surage Current (A)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
40
30
20
10
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
Number of Cycles
2015.03
www.sdjingdao.com
Page 2 of 3
山东晶导微电子有限公司
ABS1-10 THRU ABS10-10
Jingdao Microelectronics
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
ABS/LBF
∠ALL ROUND
∠ALL ROUND
C
A
a
L1
d
L
HE
e
D
e
E
ABS/LBF mechanical data
A
C
D
E
HE
d
e
max
1.5
0.22
5.2
4.5
6.4
4.2
0.7
min
1.3
0.15
4.9
4.2
6.0
3.8
0.5
max
59
8.7
205
177
252
165
28
min
51
5.9
193
166
236
150
20
UNIT
mm
L
L1
a
0.95
0.6
0.2
∠
7°
37
mil
The recommended mounting pad size
8
Marking
6.2
244
4.0
157
1.0
39
24
Type number
Marking code
ABS1-10
10T1
ABS2-10
10T2
ABS4-10
10T4
ABS6-10
10T6
ABS8-10
10T8
ABS10-10
2.0
79
10T10
mm
Unit :
(mil)
10Txx
2015.03
www.sdjingdao.com
Page 3 of 3
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