MB10S-10

山东晶导微电子有限公司 MB1S-10 THRU MB10S-10 Jingdao Microelectronics 1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER FEATURES: PINNING Glass Passivated Chip Junction Reverse Voltage - 100 to 1000 V PIN DESCRIPTION 1 Input Pin（~） 2 Input Pin（~） Forward Current - 1 A High Surge Current Capability 3 Output Anode（+） Designed for Surface Mount Application 4 Output Cathode（-） MECHANICAL DATA • Case: MBS • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 100mg / 0.0035oz 3 4 2 1 MBS Package Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols MB1S-10 MB2S-10 MB4S-10 MB6S-10 MB8S-10 Maximum Repetitive Peak Reverse Voltage V RRM 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 100 200 400 600 800 1000 V Parameter Average Rectified Output Current at T c = 125 °C MB10S-10 Units IO 1.0 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) I FSM 35 A Maximum Forward Voltage at 1.0 A VF 1.1 V IR 5 40 μA Cj 13 pF RθJA RθJC 80 28 °C/W T j , T stg -55 ~ +150 °C Maximum DC Reverse Current at Rated DC Blocking Voltage @ T A =25 °C @ T A =125 °C Typical Junction Capacitance（Note1） Typical Thermal Resistance（Note2） Operating and Storage Temperature Range Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C. 2. Mounted on glass epoxy PC board with 4×1.5"×1.5"（3.81×3.81 cm）copper pad. 2016.01 MBS-A-MB1S-10~MB10S-10-1A1KV Page 1 of 3 山东晶导微电子有限公司 MB1S-10 THRU MB10S-10 Jingdao Microelectronics Fig.2 Typical Reverse Characteristics 1.2 1.0 0.8 0.6 0.4 0.2 Resistive or Inductive Load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current（μ A） Average Rectified Output Current (A) Fig.1 Average Rectified Output Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 T J =25°C 1.0 0.1 pulse with 300μs 1% duty cycle 0.01 0.0 40 60 80 100 120 140 Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Instaneous Forward Current (A) Fig.3 Typical Instaneous Forward Characteristics 10 20 percent of Rated Peak Reverse Voltage (%) Case Temperature (°C) 100 T J =25°C 10 1 0.5 1.0 1.5 2.0 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2016.01 www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 MB1S-10 THRU MB10S-10 Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 4 leads MBS A ∠ALL ROUND C a L1 L d HE e D e E MBS mechanical data A C D E HE d e L L1 a max 2.6 0.22 5.0 4.1 7.0 2.7 0.7 1.7 1.1 0.2 min 2.2 0.15 4.5 3.6 6.4 2.3 0.5 1.3 0.5 max 102 8.7 197 161 276 106 28 67 43 min 94 5.9 177 142 252 91 20 51 20 UNIT ∠ mm 7° 8 mil Marking 6.0 236 2.5 100 0.9 35 2.4 94 mm Unit ： (mil) Type number Marking code MB1S-10 10S1 MB2S-10 10S2 MB4S-10 10S4 MB6S-10 10S6 MB8S-10 10S8 MB10S-10 10S10 10Sxx 2016.01 JD601144B6 Page 3 of 3