FMSB30M

山东晶导微电子有限公司 FMSB30B THRU FMSB30M Jingdao Microelectronics 3A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER FEATURES: PINNING • Glass Passivated Chip Junction PIN • Reverse Voltage - 100 to 1000 V DESCRIPTION 1 Output Anode（+） 2 Output Cathode（-） • Fast reverse recovery time 3 Input Pin（~） • Designed for Surface Mount Application 4 Input Pin（~） • Forward Current - 3.0 A 1 MECHANICAL DATA • Case: UMSB • Terminals: Solderable per MIL-STD-750, Method 2026 2 4 3 UMSB Package Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols FMSB30B FMSB30D FMSB30G FMSB30J Parameter FMSB30K FMSB30M Units Maximum Repetitive Peak Reverse Voltage V RRM 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 100 200 400 600 800 1000 V Average Rectified Output Current at T c = 115 °C IO 3.0 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) I FSM 80 A Maximum Forward Voltage at 3.0 A VF 1.3 V IR 5.0 200 μA Typical Junction Capacitance（Note1） Cj 40 pF Typical Thermal Resistance（Note2） RθJA 30 °C/W Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Maximum Reverse Recovery Time （Note3） Operating and Storage Temperature Range t rr 250 150 T j , T stg -55 ~ +150 500 ns °C Note: 1. Measured at 1 MHz and applied reverse voltage of 4 V D.C 2. Mounted on glass epoxy PC board with 4×1.5"×1.5"（3.81×3.81 cm）copper pad. 3 . Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A . 2017.04 UMSB-F-FMSB30B~FMSB30M-3A1KV Page 1 of 3 山东晶导微电子有限公司 FMSB30B THRU FMSB30M Jingdao Microelectronics Fig.2 Typical Reverse Characteristics 4.0 3.0 2.0 1.0 Resistive or Inductive Load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current（μ A） Average Rectified Output Current (A) Fig.1 Average Rectified Output Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 CaseTemperature (°C) T J =25°C 1.0 0.1 pulse with 300μs 1% duty cycle 0.01 0.0 40 60 80 100 120 140 Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Instaneous Forward Current (A) Fig.3 Typical Instaneous Forward Characteristics 10 20 percent of Rated Peak Reverse Voltage (%) 100 T J =25°C 10 1 0.5 1.0 1.5 2.0 2.5 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 120 100 80 60 40 20 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2017.04 www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 FMSB30B THRU FMSB30M Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 4 leads UMSB E C A e D b L ∠ALL ROUND E1 VM A M2 mechanical data A C D E E1 L e b max 1.5 0.29 7.0 7.6 8.9 1.6 5.3 1.15 min 1.3 0.17 6.2 7.1 8.4 1.0 4.9 0.95 max 59 12 276 299 350 55 209 45 min 51 7 244 280 331 31.5 193 37 UNIT ∠ mm 10° mil Marking Type number 2017.04 Marking code FMSB30B FMB30B FMSB30D FMB30D FMSB30G FMB30G FMSB30J FMB30J FMSB30K FMB30K FMSB30M FMB30M JD705208B0 Page 3 of 3