TB10S-10

山东晶导微电子有限公司 TB1S-10 THRU TB10S-10 Jingdao Microelectronics 1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER FEATURES: PINNING • Glass Passivated Chip Juntion • Reverse Voltage - 100 to 1000 V • Forward Current - 1 A PIN DESCRIPTION 1 Input Pin（~） 2 Input Pin（~） • High Surge Current Capability 3 Output Anode（+） • Designed for Surface Mount Application 4 Output Cathode（-） MECHANICAL DATA • Case: ABS/LBF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 88mg / 0.0031oz 3 4 2 1 ABS/LBF Package Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols TB1S-10 TB2S-10 TB4S-10 TB6S-10 Maximum Repetitive Peak Reverse Voltage V RRM 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 100 200 400 600 800 1000 V Parameter Average Rectified Output Current at T c = 125 °C TB8S-10 TB10S-10 Units IO 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) I FSM 35 A Forward Voltage per element @I F =1.0A VF 1.1 V Maximum DC Reverse Current at Rated DC Blocking Voltage @ T A =100℃ IR 5 50 100 μA Cj 13 pF RθJA RθJC 72 20 °C/W T j , T stg -55 ~ +150 °C @ T A =25 °C @ T A =125 °C Typical Junction Capacitance（Note1） Typical Thermal Resistance（Note2） Operating and Storage Temperature Range Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C. 2. Mounted on glass epoxy PC board with 4×1.5"×1.5"（3.81×3.81 cm）copper pad. 2016.01 ABS-A-TB1S-10~TB10S-10-1A1KV Page 1 of 3 山东晶导微电子有限公司 TB1S-10 THRU TB10S-10 Jingdao Microelectronics Fig.2 Typical Reverse Characteristics 1.2 1.0 0.8 0.6 0.4 0.2 Resistive or Inductive Load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current（μ A） Average Rectified Output Current (A) Fig.1 Average Rectified Output Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 T J =25°C 1.0 0.1 pulse with 300μs 1% duty cycle 0.01 0.0 40 60 80 100 120 140 Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Instaneous Forward Current (A) Fig.3 Typical Instaneous Forward Characteristics 10 20 percent of Rated Peak Reverse Voltage (%) CaseTemperature (°C) 100 T J =25°C 10 1 0.5 1.0 1.5 2.0 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2016.01 www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 TB1S-10 THRU TB10S-10 Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 4 leads ABS/LBF ∠ALL ROUND ∠ALL ROUND C A a L1 d L HE e D e E ABS/LBF mechanical data A C D E HE d e max 1.5 0.22 5.2 4.5 6.4 4.2 0.7 min 1.3 0.15 4.9 4.2 6.0 3.8 0.5 max 59 8.7 205 177 252 165 28 min 51 5.9 193 166 236 150 20 UNIT mm L L1 a 0.95 0.6 0.2 ∠ 7° 37 mil The recommended mounting pad size 4.0 157 2.0 79 4 Marking 6.2 244 1.0 39 24 Type number Marking code TB1S-10 10T1 TB2S-10 10T2 TB4S-10 10T4 TB6S-10 10T6 TB8S-10 10T8 TB10S-10 10T10 mm Unit ： (mil) 10Txx 2016.01 JD512274B6 Page 3 of 3