山东晶导微电子有限公司
US1AF THRU US1MF
Jingdao Microelectronics
SURFACE MOUNT ULTRAFAST RECOVERY RECTIFIER
Reverse Voltage - 50 to 1000 V
PINNING
Forward Current - 1 A
PIN
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Easy to pick and place
• High efficiency
• Lead free in comply with EU RoHS 2011/65/EU directives
DESCRIPTION
1
Cathode
2
Anode
1
2
Top View
Marking Code: US1A~US1M
Simplified outline SMAF and symbol
MECHANICAL DATA
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 27mg / 0.00095oz
Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Symbols
Parameter
US1AF US1BF
US1DF
US1GF US1JF
US1KF US1MF
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
V RMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
V DC
50
100
200
400
600
800
1000
V
Maximum Average Forward Rectified Current
at T c = 125 °C
I F(AV)
1
A
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
I FSM
30
A
Maximum Instantaneous Forward Voltage at 1 A
VF
Maximum DC Reverse Current
T a = 25 °C
at Rated DC Blocking Voltage
T a =125 °C
Maximum Reverse Recovery Time (1)
Typical Thermal Resistance
(2)
Operating and Storage Temperature Range
1.0
1.3
5
100
IR
t rr
1.65
μA
75
50
V
ns
RθJA
80
°C/W
T j , T stg
-55 ~ +150
°C
(1)Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A .
(2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2016.01
SMAF-U-US1MF-1A1KV
Page 1 of 3
山东晶导微电子有限公司
US1AF THRU US1MF
Jingdao Microelectronics
Fig.2 Typical Reverse Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
Single phase half-wave 60 Hz
resistive or inductive load
0.0
25
50
75
100
125
150
175
Instaneous Reverse Current(μ A)
Average Forward Current (A)
Fig.1 Forward Current Derating Curve
100
T J =125°C
10
1.0
T J =25°C
0.1
00
Peak Forward Surage Current (A)
Instaneous Forward Current (A)
10
T J =25°C
1.0
US1AF~US1DF
US1GF
US1JF~US1MF
0.01
0.001
0
0.5
1.0
1.5
2.0
60
80
100
120
140
35
30
25
20
15
10
05
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
2.5
Instaneous Forward Voltage (V)
2016.01
40
Fig.4 Maximum Non-Repetitive Peak
Forward Surage Current
Fig.3 Typical Forward Characteristics
0.1
20
percent of Rated Peak Reverse Voltage (%)
Case Temperature (°C)
1
10
100
Number of Cycles
www.sdjingdao.com
Page 2 of 3
山东晶导微电子有限公司
US1AF THRU US1MF
Jingdao Microelectronics
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SMAF
∠ALL ROUND
C
A
∠ALL ROUND
HE
g
Top View
mil
Bottom View
A
C
D
E
e
g
HE
max
1.2
0.20
3.7
2.7
1.6
1.2
4.9
min
0.9
0.12
3.3
2.4
1.3
0.8
4.4
max
47
7.9
146
106
63
47
193
min
35
4.7
130
94
51
31
173
UNIT
mm
g
pad
e
E
A
pad
D
E
A
V M
7°
The recommended mounting pad size
Marking
Type number
2.2
(86)
1.6
(63)
1.8
(71)
1.6
(63)
mm
Unit :
(mil)
2016.01
∠
JD512254B6
Marking code
US1AF
US1A
US1BF
US1B
US1DF
US1D
US1GF
US1G
US1JF
US1J
US1KF
US1K
US1MF
US1M
Page 3 of 3
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