山东晶导微电子有限公司
FMSB40B THRU FMSB40M
Jingdao Microelectronics
4A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
FEATURES:
PINNING
• Glass Passivated Chip Junction
PIN
• Reverse Voltage - 100 to 1000 V
DESCRIPTION
1
Output Anode(+)
2
Output Cathode(-)
• Fast reverse recovery time
3
Input Pin(~)
• Designed for Surface Mount Application
4
Input Pin(~)
• Forward Current - 4.0 A
1
MECHANICAL DATA
• Case: UMSB
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 0.234g / 0.00825oz
2
4
3
UMSB Package
Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Symbols FMSB40B FMSB40D FMSB40G FMSB40J
Parameter
FMSB40K FMSB40M Units
Maximum Repetitive Peak Reverse Voltage
V RRM
100
200
400
600
800
1000
V
Maximum RMS voltage
V RMS
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
V DC
100
200
400
600
800
1000
V
Average Rectified Output Current
at T c = 115 °C
IO
4.0
A
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
(JEDEC Method)
I FSM
95
A
Maximum Forward Voltage at 4.0 A
VF
1.3
V
IR
5.0
200
μA
Typical Junction Capacitance(Note1)
Cj
50
pF
Typical Thermal Resistance(Note2)
RθJA
40
°C/W
Maximum DC Reverse Current
T a = 25 °C
at Rated DC Blocking Voltage
T a =125 °C
Maximum Reverse Recovery Time (Note3)
Operating and Storage Temperature Range
t rr
250
150
T j , T stg
-55 ~ +150
500
ns
°C
Note: 1. Measured at 1 MHz and applied reverse voltage of 4 V D.C
2. Mounted on glass epoxy PC board with 4×1.5"×1.5"(3.81×3.81 cm)copper pad.
3 . Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A .
2017.04
UMSB-F-FMSB40B~FMSB40M-4A1KV
Page 1 of 3
山东晶导微电子有限公司
FMSB40B THRU FMSB40M
Jingdao Microelectronics
Average Rectified Output Current (A)
5.0
4.0
3.0
2.0
1.0
Resistive or Inductive Load
0.0
25
50
75
100
125
150
175
Instaneous Reverse Current(μ A)
Fig.2 Typical Reverse Characteristics
Fig.1 Average Rectified Output Current
Derating Curve
100
T J =125°C
10
1.0
T J =25°C
0.1
00
T J =25°C
1.0
0.1
pulse with 300μs
1% duty cycle
0.01
0.0
40
60
80
100
120
140
Fig.4 Typical Junction Capacitance
Junction Capacitance ( pF)
Instaneous Forward Current (A)
Fig.3 Typical Instaneous Forward
Characteristics
10
20
percent of Rated Peak Reverse Voltage (%)
Case Temperature (°C)
100
T J =25°C
10
1
0.5
1.0
1.5
2.0
2.5
0.1
1.0
10
100
Reverse Voltage (V)
Instaneous Forward Voltage (V)
Peak Forward Surage Current (A)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
114
95
76
57
38
19
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
Number of Cycles
2017.04
www.sdjingdao.com
Page 2 of 3
山东晶导微电子有限公司
FMSB40B THRU FMSB40M
Jingdao Microelectronics
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
UMSB
E
C
A
e
D
b
L
∠ALL ROUND
E1
VM
A
M2 mechanical data
A
C
D
E
E1
L
e
b
max
1.5
0.29
7.0
7.6
8.9
1.6
5.3
1.15
min
1.3
0.17
6.2
7.1
8.4
1.0
4.9
0.95
max
59
12
276
299
350
55
209
45
min
51
7
244
280
331
31.5
193
37
UNIT
∠
mm
10°
mil
Marking
Type number
2017.04
Marking code
FMSB40B
FMB40B
FMSB40D
FMB40D
FMSB40G
FMB40G
FMSB40J
FMB40J
FMSB40K
FMB40K
FMSB40M
FMB40M
JD705209B5
Page 3 of 3
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