ES3DBF

山东晶导微电子有限公司 ES3ABF THRU ES3JBF Jingdao Microelectronics Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V PINNING Forward Current – 3 A PIN FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Superfast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives DESCRIPTION 1 Cathode 2 Anode 1 2 Simplified outline SMBF and symbol MECHANICAL DATA • Case: SMBF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 57mg / 0.002oz Absolute Maximum Ratings and Characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols ES3ABF ES3BBF Maximum Repetitive Peak Reverse Voltage V RRM 50 100 150 Maximum RMS voltage V RMS 35 70 Maximum DC Blocking Voltage V DC 50 100 Maximum Average Forward Rectified Current at T c = 125 °C I F(AV) 3 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 80 A Maximum Forward Voltage at 3 A VF Parameter Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Typical Junction Capacitance at V R =4V, f=1MHz Maximum Reverse Recovery Time （1） Typical Thermal Resistance （2） Operating and Storage Temperature Range ES3EBF ES3GBF ES3JBF Units 200 300 400 600 V 105 140 210 280 420 V 150 200 300 400 600 V ES3CBF ES3DBF 1.25 1 1.68 V IR 5 100 μA Cj 35 pF t rr 35 ns RθJA RθJC 45 15 °C/W T j , T stg -55 ~ +150 °C （1）Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A . （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.12 SMBF-E-ES3ABF~ES3JBF-3A600V Page 1 of 3 山东晶导微电子有限公司 ES3ABF THRU ES3JBF Jingdao Microelectronics Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive t rr 10 ohm Noninductive +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm NonInductive OSCILLOSCOPE Note 1 -1.0 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 4.0 300 3.5 100 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 3.0 2.5 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 20 0 40 Case Temperature (°C) Junction Capacitance ( pF) Instaneous Forward Current (A) T J =25°C 1.0 ES3ABF~ES3DBF ES3EBF/WS3GBF 0.1 80 100 Fig.5 Typical Junction Capacitance Fig.4 Typical Forward Characteristics 10 60 % of PIV.VOLTS ES3JBF 0.01 T J =25°C 100 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 1 0.001 0 0.5 1.0 1.5 2.0 2.5 Instaneous Forward Voltage (V) 0.1 1.0 10 100 Reverse Voltage (V) Peak Forward Surage Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 90 75 60 45 30 15 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2016.12 www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 ES3ABF THRU ES3JBF Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMBF ∠ALL ROUND C A ∠ALL ROUND D E A V M g Top View mil Bottom View A C D E HE e max 1.3 0.26 4.4 3.7 5.5 2.2 min 1.1 0.18 4.2 3.5 5.1 1.9 max 51 10 173 146 216 86 min 43 7 165 138 200 75 UNIT mm ∠ 9° Type number Marking code 1.8(71) 2.54(100) 3.0(118) 40 Marking Unit：mm(mil) 2016.12 g 1.0 The recommended mounting pad size 1.8(71) g pad e E A pad HE JD612288B0 ES3ABF E3AB ES3BBF E3BB ES3CBF E3CB ES3DBF E3DB ES3EBF E3EB ES3GBF E3GB ES3JBF E3JB Page 3 of 3