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TB10F

TB10F

  • 厂商:

    JINGDAO(晶导微电子)

  • 封装:

    ABF

  • 描述:

    0.8A表面安装玻璃钝化桥式整流器 VR=1KV IR=5μA ABF

  • 数据手册
  • 价格&库存
TB10F 数据手册
山东晶导微电子股份有限公司 TB1F THRU TB10F Jingdao Microelectronics co.LTD 0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER FEATURES: PINNING • Glass Passivated Chip Junction • Reverse Voltage - 100 to 1000 V • Forward Current - 0.8 A PIN DESCRIPTION 1 Input Pin(~) 2 Input Pin(~) • High Surge Current Capability 3 Output Anode(+) • Designed for Surface Mount Application 4 Output Cathode(-) MECHANICAL DATA • Case: ABF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 82mg 0.0029oz 3 4 2 1 ABF Package Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols TB1F TB2F TB4F TB6F TB8F TB10F Units Maximum Repetitive Peak Reverse Voltage V RRM 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 100 200 400 600 800 1000 V Parameter Average Rectified Output Current at T c = 125 °C Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) Forward Voltage per element @I F= 0.4A @I F= 0.8A Maximum DC Reverse Current at Rated DC Blocking Voltage @ T A =100℃ IO 0.8 A I FSM 30 A VF 1.0 1.1 V IR 5 50 100 μA RθJA RθJC 80 25 °C/W T j , T stg -55 ~ +150 °C @ T A =25 °C @ T A =125 °C Typical Thermal Resistance(Note2) Operating and Storage Temperature Range Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C. 2. Mounted on glass epoxy PC board with 4×1.5"×1.5"(3.81×3.81 cm)copper pad. 2018.12 ABF-A-TB1F~TB10F-0.8A1KV Page 1 of 3 山东晶导微电子股份有限公司 TB1F THRU TB10F Jingdao Microelectronics co.LTD Fig.2 Typical Reverse Characteristics 1.2 1.0 0.8 0.6 0.4 0.2 Resistive or Inductive Load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current(μ A) Average Rectified Output Current (A) Fig.1 Average Rectified Output Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 T J =25°C 1.0 0.1 pulse with 300μs 1% duty cycle 0.01 0.0 0.5 1.0 1.5 2.0 60 80 100 120 140 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles Instaneous Forward Voltage (V) 2018.12 40 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak Forward Surage Current (A) Instaneous Forward Current (A) Fig.3 Typical Instaneous Forward Characteristics 10 20 percent of Rated Peak Reverse Voltage (%) Case Temperature (°C) www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 TB1F THRU TB10F Jingdao Microelectronics co.LTD PACKAGE OUTLINE Plastic surface mounted package; 4 leads ABF ∠ALL ROUND ∠ALL ROUND C A a L1 d L HE e D e E ABF mechanical data A C D E HE d e max 1.2 0.22 5.2 4.5 6.4 4.2 0.7 min 1.0 0.15 4.9 4.2 6.0 3.8 0.5 max 47 8.7 205 177 252 165 28 min 39 5.9 193 166 236 150 20 UNIT mm L L1 a 0.95 0.6 0.2 ∠ 7° 37 mil The recommended mounting pad size 24 8 Marking Type number 6.2 244 4.0 157 1.0 39 2.0 79 2018.12 mm Unit : (mil) JD812234B2 Marking code TB1F TB1F TB2F TB2F TB4F TB4F TB6F TB6F TB8F TB8F TB10F TB10F TBxxF Page 3 of 3
TB10F 价格&库存

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TB10F
  •  国内价格
  • 1+0.07233
  • 100+0.06751
  • 300+0.06269
  • 500+0.05787
  • 2000+0.05546
  • 5000+0.05401

库存:5000

TB10F
    •  国内价格
    • 20+0.10801
    • 200+0.06979
    • 600+0.04560
    • 5000+0.04131
    • 10000+0.03760
    • 20000+0.03559

    库存:3648