MMBD7000(A7)

MMBD7000 Silicon Epitaxial Planar Switching Diode Features • Fast switching speed • High Conductance 3 1 2 Marking Code: A7 TO-236 Plastic Package Applications • For general purpose switching Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 100 V Reverse Voltage VR 100 V Forward Current IF 200 mA IFSM A Pd 1 2 350 Tj, Tstg - 65 to + 150 Repetitive Peak Reverse Voltage Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 μs Power Dissipation Junction and Storage Temperature Range mW C O Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit V(BR)R 100 - V 0.55 0.67 0.75 - 0.7 0.82 1.1 1.25 Reverse Breakdown Voltage at IR = 100 µA Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 100 mA at IF = 150 mA VF Reverse Current at VR = 50 V at VR = 100 V at VR = 50 V, Tj = 125 OC IR - 1 3 100 Total Capacitance at VR = 0 V, f = 1 MHz CT - 2 pF Reverse Recovery Time at IF = IR = 10 mA, Irr = 0.1 X IR, RL = 100 Ω trr - 4 ns V µA SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 MMBD7000 SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01