2N4401

2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 600 mA Power Dissipation Ptot 625 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range C C SEMTECH ELECTRONICS LTD. ® Dated : 12/08/2016 Rev: 01 2N4400 / 2N4401 Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 0.1 mA at VCE = 1 V, IC = 1 mA Symbol Min. Max. Unit hFE hFE hFE hFE hFE hFE hFE hFE hFE 20 20 40 40 58 50 100 20 40 150 300 - - ICBO - 100 nA IEBO - 100 nA Collector Base Breakdown Voltage at IC = 100 µA V(BR)CBO 60 - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 40 - V V(BR)EBO 6 - V VCE(sat) - 0.4 0.75 V VBE(sat) 0.75 - 0.95 1.2 V fT 200 250 - MHz Collector Output Capacitance at VCB = 5 V, f = 100 MHz Cob - 12 pF Turn On Time at VCC = 30 V, VBE = 2 V, IC = 150 mA, IB1 = 15 mA ton - 35 ns Turn Off Time at VCC = 30 V, IC = 150 mA, IB1 = IB2 =15 mA toff - 255 ns at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 150 mA at VCE = 2 V, IC = 500 mA 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 Collector Base Cutoff Current at VCB = 35 V Emitter Base Cutoff Current at VEB = 5 V Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Gain Bandwidth Product at VCE = 10 V, IC = 20 mA, f = 100 MHz 2N4400 2N4401 SEMTECH ELECTRONICS LTD. ® Dated : 12/08/2016 Rev: 01 2N4400 / 2N4401 SEMTECH ELECTRONICS LTD. ® Dated : 12/08/2016 Rev: 01 2N4400 / 2N4401 SEMTECH ELECTRONICS LTD. ® Dated : 12/08/2016 Rev: 01