8550D(1.5A)

8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 C) Parameter O Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 1.5 A Power Dissipation Ptot 1 Tj 150 O TStg - 55 to + 150 O Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 5 mA at -VCE = 1 V, -IC = 100 mA Current Gain Group C D at -VCE = 1 V, -IC = 800 mA Collector Base Cutoff Current at -VCB = 35 V Emitter Base Cutoff Current at -VBE = 6 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 2 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 800 mA, -IB = 80 mA Base Emitter Saturation Voltage at -IC = 800 mA, -IB = 80 mA Base Emitter Voltage at -IC = 10 mA, -VCE = 1 V Gain Bandwidth Product at -VCE = 10 V, -IC = 50 mA Collector Base Capacitance at -VCB = 10 V, f = 1 MHz W C C Symbol Min. Typ. Max. Unit hFE hFE hFE hFE 45 120 160 40 - 200 300 - - -ICBO - - 100 nA -IEBO - - 100 nA -V(BR)CBO 40 - - V -V(BR)CEO 25 - - V -V(BR)EBO 6 - - V -VCE(sat) - - 0.5 V -VBE(sat) - - 1.2 V -VBE - - 1 V fT 120 - - MHz Cob - 15 - pF SEMTECH ELECTRONICS LTD. ® Dated : 05/04/2016 CL Rev: 01 8550 (1.5A) SEMTECH ELECTRONICS LTD. ® Dated : 05/04/2016 CL Rev: 01