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2N5401

2N5401

  • 厂商:

    ST(先科)

  • 封装:

    TO92-3

  • 描述:

    通用三极管 PNP 150V 600mA hFE=60~240 TO92

  • 数据手册
  • 价格&库存
2N5401 数据手册
2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors 2N5550 and 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Symbol 2N5400 2N5401 2N5400 2N5401 Emitter Base Voltage -VCBO -VCEO Value 130 160 120 150 Unit V V -VEBO 5 V Collector Current -IC 600 mA Power Dissipation Ptot 625 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range C C SEMTECH ELECTRONICS LTD. ® Dated: 12/08/2016 Rev:01 2N5400 / 2N5401 Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 1 mA at -VCE = 5 V, -IC = 10 mA at -VCE = 5 V, -IC = 50 mA Collector Base Cutoff Current at -VCB = 100 V at -VCB = 120 V Emitter Base Cutoff Current at -VEB = 3 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA Base Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA Symbol Min. Max. Unit 2N5400 2N5401 2N5400 2N5401 2N5400 2N5401 hFE hFE hFE hFE hFE hFE 30 50 40 60 40 50 180 240 - - 2N5400 2N5401 -ICBO - 100 50 nA -IEBO - 50 nA 2N5400 2N5401 -V(BR)CBO 130 160 - V 2N5400 2N5401 -V(BR)CEO 120 150 - V -V(BR)EBO 5 - V -VCE(sat) - 0.2 0.5 V -VBE(sat) - 1 1 V fT 100 400 MHz Cob - 6 pF Gain Bandwidth Product at -VCE = 10 V, -IC = 10 mA, f = 100 MHz Collector Output Capacitance at -VCB = 10 V, f = 1 MHz SEMTECH ELECTRONICS LTD. ® Dated: 12/08/2016 Rev:01 2N5400 / 2N5401 IC - VBE Collector Current Ic (mA) Power Dissipation Ptot (mW) Ptot-Ta Ambient Temperature Ta ( ℃ ) Base Emitter Voltage VBE (V) fT - IC Transition Frequency Collector Emitter Saturation Base Emitter Saturation Voltage V C E ( s a t ) , V B E ( s at ) ( m V ) V CE(sat), V BE(sat) - I C o l l e c t o r C u r r e n t IC ( m A ) C VBE(sat) VCE(sat) C o l l e c t o r C u r r e n t IC ( m A ) Collector Output Capacitance Cob (pF) Cob - VCB Collector Base Voltage VCB (V) SEMTECH ELECTRONICS LTD. ® Dated: 12/08/2016 Rev:01
2N5401 价格&库存

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2N5401
    •  国内价格
    • 20+0.14559
    • 200+0.11697
    • 1000+0.09180
    • 2000+0.08230

    库存:4583

    2N5401
    •  国内价格
    • 20+0.18480
    • 100+0.13830
    • 500+0.10710
    • 1000+0.07770
    • 5000+0.06990

    库存:13926

    2N5401
    •  国内价格
    • 5+0.09735
    • 20+0.08850
    • 100+0.07965
    • 500+0.07080
    • 1000+0.06667
    • 2000+0.06372

    库存:10331