2N2907A

2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit -VCBO 60 V -VCEO 40 60 V -VEBO 5 V Collector Current -IC 600 mA Power Dissipation Ptot 625 mW Tj 150 ℃ Tstg - 55 to + 150 ℃ Collector Base Voltage Collector Emitter Voltage 2N2907 2N2907A Emitter Base Voltage Junction Temperature Storage Temperature Range SEMTECH ELECTRONICS LTD. ® Dated: 12/04/2016 Re: 02 2N2907 / 2N2907A Characteristics at Ta = 25℃ Parameter DC Current Gain at -IC = 0.1 mA, -VCE = 10 V at -IC = 1 mA, -VCE = 10 V at -IC = 10 mA, -VCE = 10 V at -IC = 150 mA, -VCE = 10 V at -IC = 500 mA, -VCE = 10 V Collector Base Cutoff Current at -VCB = 50 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 10 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Saturation Voltage at -IC = 150 mA, -IB = 15 mA at -IC = 500 mA, -IB = 50 mA Base Saturation Voltage at -IC = 150 mA, -IB = 15 mA at -IC = 500 mA, -IB = 50 mA Gain Bandwidth Product at -IC = 50 mA , -VCE = 20 V, f = 100 MHz Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Turn-on Time at -VCC = 30 V, -IC = 150 mA, -IB1 = 15 mA Delay Time at -VCC = 30 V, -IC = 150 mA, -IB1 = 15 mA Rise Time at -VCC = 30 V, -IC = 150 mA, -IB1 = 15 mA Turn-off Time at -VCC = 6 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA Storage Time at -VCC = 6 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA Fall Time at -VCC = 6 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA Symbol Min. Max. Unit 2N2907 2N2907A hFE hFE hFE hFE hFE hFE hFE hFE hFE 35 75 50 100 75 100 100 30 50 300 - - 2N2907 2N2907A -ICBO -ICBO - 20 10 nA nA -V(BR)CBO 60 - V -V(BR)CEO -V(BR)CEO 40 60 - V V -V(BR)EBO 5 - V -VCE(sat) -VCE(sat) - 0.4 1.6 V V -VBE(sat) -VBE(sat) - 1.3 2.6 V V fT 200 - MHz Cob - 8 pF ton - 45 ns td - 10 ns tr - 40 ns toff - 100 ns ts - 80 ns tf - 30 ns 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A SEMTECH ELECTRONICS LTD. ® Dated: 12/04/2016 Re: 02 2N2907 / 2N2907A SEMTECH ELECTRONICS LTD. ® Dated: 12/04/2016 Re: 02