山东晶导微电子有限公司
MB14S THRU MB120S
Jingdao Microelectronics
1A SURFACE MOUNT SCHOTTKY BRIDGE
FEATURES:
PINNING
Reverse Voltage - 40 to 200 V
PIN
DESCRIPTION
1
Input Pin(~)
2
Input Pin(~)
Forward Current - 1 A
High Surge Current Capability
Designed for Surface Mount Application
3
Output Anode(+)
4
Output Cathode(-)
MECHANICAL DATA
• Case: MBS
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 100mg / 0.0035oz
3
4
2
1
MBS Package
Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Symbols
MB14S
MB16S
MB18S
MB110S
MB115S
MB120S
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
40
60
80
100
150
200
V
Maximum RMS voltage
V RMS
28
42
56
70
105
140
V
Maximum DC Blocking Voltage
V DC
40
60
80
100
150
200
V
Parameter
Maximum Average Forward Rectified Current
at Tc = 100°C
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
Max Instantaneous Forward Voltage at 1 A
Maximum DC Reverse Current
T a = 25°C
at Rated DC Reverse Voltage
T a =100°C
Typical Junction Capacitance 1)
Typical Thermal Resistance
2)
Operating Junction Temperature Range
Storage Temperature Range
I F(AV)
1.0
I FSM
VF
40
0.55
30
0.70
0.3
10
IR
Cj
A
110
A
0.85
0.90
V
0.2
5
0.1
2
mA
80
pF
RθJA
100
°C/W
Tj
-55 ~ +125
°C
T stg
-55 ~ +150
°C
Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C.
2. Mounted on glass epoxy PC board with 4×1.5"×1.5"(3.81×3.81 cm)copper pad.
2016.01
MBS-S-MB14S~MB120S-1A200V
Page 1 of 3
山东晶导微电子有限公司
MB14S THRU MB120S
Jingdao Microelectronics
Fig.2 Typical Reverse Characteristics
Average Forward Current (A)
1.2
1.0
0.8
0.6
0.4
0.2
Resistive or Inductive Load
0.0
25
75
50
100
125
150
Instaneous Reverse Current ( μA)
Fig.1 Forward Current Derating Curve
10 4
10 3
T J =100°C
10 2
T J =75°C
10 1
T J =25°C
10
0
0
Case Temperature (°C)
40
20
60
80
100
Percent of Rated Peak Reverse Voltage(%)
500
10
1.0
MB14S
MB16S/MB18S
MB110S
MB115S/MB120S
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
100
50
MB16S-MB120S
10
0.1
1
10
100
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Fig.6- Typical Transient Thermal Impedance
MB110S-MB120S
40
30
20
10
8.3 ms Single Half Sine Wave
(JEDEC Method)
10
100
1000
100
10
Number of Cycles at 60Hz
2016.01
MB14S
20
Instaneous Forward Voltage (V)
MB14S-MB18S
1
T J =25°C
200
1.8
50
00
Junction Capacitance ( pF)
T J =25°C
20
Transient Thermal Impedance( °C /W)
Peak Forward Surage Current (A)
Instaneous Forward Current (A)
Fig.4 Typical Junction Capacitance
1
0.01
0.1
1
10
100
t, Pulse Duration(sec)
www.sdjingdao.com
Page 2 of 3
山东晶导微电子有限公司
MB14S THRU MB120S
Jingdao Microelectronics
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
MBS
A
∠ALL ROUND
C
a
L1
L
d
HE
e
D
e
E
MBS mechanical data
A
C
D
E
HE
d
e
L
L1
a
max
2.6
0.22
5.0
4.1
7.0
2.7
0.7
1.7
1.1
0.2
min
2.2
0.15
4.5
3.6
6.4
2.3
0.5
1.3
0.5
max
102
8.7
197
161
276
106
28
67
43
min
94
5.9
177
142
252
91
20
51
20
UNIT
∠
mm
7°
8
mil
Marking
Type number
6.0
236
2.5
100
0.9
35
2.4
94
mm
Unit :
(mil)
Marking code
MB14S
MB14S
MB16S
MB16S
MB18S
MB18S
MB110S
MB110S
MB115S
MB115S
MB120S
MB120S
MBxxS
2016.01
XTH509302A8
Page 3 of 3
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