SS58BF

山东晶导微电子股份有限公司 SS52BF THRU SS520BF Jingdao Microelectronics co.LTD Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 5.0A PINNING PIN FEATURES • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: S52B~S520B Simplified outline SMBF and symbol MECHANICAL DATA • Case: SMBF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 57 mg / 0.002oz Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter SS52BF SS54BF SS56BF SS58BF SS510BF SS512BF SS515BF SS520BF Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) 5.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 120 A Max Instantaneous Forward Voltage at 5 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance （1） Typical Thermal Resistance （2） Operating Junction Temperature Range Storage Temperature Range VF 0.55 0.85 1.0 50 IR Cj 0.70 mA 500 800 V pF RθJA 45 °C/W Tj -55 ~ +150 °C T stg -55 ~ +150 °C （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2018.06 SMBF-S-SS52BF~SS520BF-5A200V Page 1 of 3 山东晶导微电子股份有限公司 SS52BF THRU SS520BF Jingdao Microelectronics co.LTD Fig.2 Typical Reverse Characteristics Average Forward Current (A) 6.0 5.0 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve 10 4 T J =100°C 10 3 10 1 T J =25°C 10 0 0 Case Temperature (°C) 60 80 100 Fig.4 Typical Junction Capacitance T J =25°C 10 1 SS52BF/SS54BF SS56BF/SS58BF SS510BF/SS520BF 0.1 0 0.5 1.0 1.5 500 100 SS52BF/SS54BF SS54F/SS520F SS56BF-SS520BF 20 10 0.1 1 10 100 Instaneous Forward Voltage (V) Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance 120 100 80 60 40 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 1000 2.0 140 20 Junction Capacitance ( pF) 20 10 100 Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) Peak Forward Surage Current (A) 40 20 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic 100 10 Number of Cycles at 60Hz 2018.06 T J =75°C 10 2 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 SS52BF THRU SS520BF Jingdao Microelectronics co.LTD PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMBF ∠ALL ROUND C A ∠ALL ROUND D E A V M g Top View mil Bottom View g A C D E HE e max 1.3 0.26 4.4 3.7 5.5 2.2 min 1.1 0.18 4.2 3.5 5.1 1.9 max 51 10 173 146 216 86 min 43 7 165 138 200 75 UNIT mm g pad e E A pad HE 1.0 9° 40 Marking The recommended mounting pad size Type number 3.0(118) 1.8(71) 2.54(100) 1.8(71) Unit：mm(mil) 2018.06 ∠ 806226B0 Marking code SS52BF S52B SS54BF S54B SS56BF S56B SS58BF S58B SS510BF S510B SS512BF S512B SS515BF S515B SS520BF S520B Page 3 of 3