MBR20150CT

山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MBR2040 x CT THRU MBR20200 x CT SCHOTTKY BARRIER RECTIFIERS Reverse Voltage - 40 to 200 V Forward Current - 20 A FEATURES • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed • Mounting position: any A1 A1 K A2 K A2 TO-220AB Mechanical data • Case: TO-220AB • A pprox. Weight: 1.9g ( 0.067oz) • Case: ITO-220AB • A pprox. Weight: 2.1g ( 0.07oz) • Terminals: Lead solderable per MIL-STD-202, Method 208 ITO-220AB A1 K A2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified TO-220 MBR2040CT MBR2045CT ITO-220 MBR2040FCT MBR2045FCT Maximum Recurrent Peak Reverse Voltage V RRM 40 45 60 100 150 200 V Maximum RMS voltage V RMS 28 31.5 42 70 105 140 V Maximum DC Blocking Voltage V DC 40 45 60 100 150 200 V MBR2060CT MBR20100CT MBR20150CT MBR20200CT CHARACTERISTICS Units MBR2060FCT MBR20100FCT MBR20150FCT MBR20200FCT per diode per device I F(AV) 10 20 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) per diode I FSM 150 A Maximum Average Forward Rectified Current Max Instantaneous Forward Voltage at 10 A(per diode) Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =125°C Typical Junction Capacitance （1） Typical Thermal Resistance （2） Operating Junction Temperature Range Storage Temperature Range VF 0.70 0.85 0.90 0.1 20 IR Cj 0.75 0.92 0.05 20 600 mA pF 400 °C/W 45 RθJA V Tj -55 ~ +150 -55 ~ +175 °C T stg -55 ~ +150 -55 ~ +175 °C （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 10cmX10cmX1mm copper pad areas. 2019.05 TO-220AB-ITO-220AB-S-MBR2040XCT~MBR20200XCT-20A200V Page 1 of 3 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MBR2040 x CT THRU MBR20200 x CT Fig.2 Typical Reverse Characteristics 20 15 15 0~ 20 0V ~1 00 10 V 5 0.0 20 40 60 80 100 120 140 160 180 Instaneous Reverse Current ( mA) 25 40 Average Forward Current (A) Fig.1 TYPICAL FORWARD CURRENT DERATING CURVE 100 40~100V 150~200V 10 T J =100°C 1.0 0.1 T J =25°C 0.01 0.001 0 Case Temperature (°C) 40 20 60 80 100 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic(per leg) Fig.4 Typical Junction Capacitance T J =25°C 20 Junction Capacitance ( pF) Instaneous Forward Current (A) T J =25°C 10 1 40~45V 60V 100V 150V 200V 0.1 0 0.2 0.4 0.6 0.8 1.0 1000 500 100 40~45V 20 60~200V 10 1.2 0.1 160 140 120 100 80 60 40 8.3 ms Single Half Sine Wave (JEDEC Method) 00 10 100 Transient Thermal Impedance（ °C /W） Peak Forward Surage Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 1 100 Fig.6- Typical Transient Thermal Impedance 100 10 Number of Cycles at 60Hz 2019.05 10 Reverse Voltage (V) Instaneous Forward Voltage (V) 20 1 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MBR2040 x CT THRU MBR20200 x CT TO-220AB 10.45 ( 0.411 ) 9.85 ( 0.388 ) TYP 3.7 4.2 ( 0.165 ) 2.8 ( 0.110 ) 1.77 ( 0.070 ) 1.14 ( 0.045 ) 0.94 ( 0.040 ) 0.62 ( 0.024 ) 4.76 (0.187) 4.42 (0.174) 16.0 (0.630) 14.6 (0.575) 6.6 ( 0.260 ) 6.0 ( 0.236 ) 1.40 (0.055) 1.14 (0.045) 14.79 (0.582) 13.19 (0.519) 2.94 ( 0.116 ) 2.54 ( 0.100 ) PACKAGE OUTLINE Plastic surface mounted package; 3 leads 2.80 (0.110) 2.20 (0.087) 0.64 (0.025) 0.35 (0.014) Unit: inch (mm) TYP 2.54 ITO-220AB 0.413 (10.5) 0.388 (9.85) TYP 3.5 0.114 (2.9) 0.091 (2.3) 0.055 (1.4) 0.043 (1.1) 0.031 (0.8) 0.020 (0.5) 0.185 (4.7) 0.173 (4.4) 0.63 (16.0) 0.58 (14.7) 0.276 (7.0) 0.248 (6.3) 0.114 (2.9) 0.098 (2.5) 0.563 (14.3) 0.512 (13.0) 0.112 (2.85) 0.100 (2.54) PACKAGE OUTLINE Plastic surface mounted package; 3 leads 0.110 (2.8) 0.098 (2.5) 0.027 (0.70) 0.016 (0.41) TYP 2.54 1 2019.05 2 Unit: inch (mm) 3 JD90515 Page 3 of 3