DB207S

DB201S-DB207S SILICON BRIDGE RECTIFIERS FEATURES z DB-S Rating to 1000V PRVP I Surge overload rating to 60 Amperes peak - + B z z Ideal for printed circuit board z Reliable low cost construction utilizing molded ~ ~ K Lead solderable per MIL-STD-202 method 208 z Glass passivated chip junctions z Plastic material has UL flammability classification94V-O E H C G z Min Max A 8.20 8.60 6.50 B 6.10 C 2.35 2.65 D 9.80 10.20 E 0.15 0.35 F 0.90 G A plastic technique results in inexpensive product Dim F D 1.50 0.20MAX H 2.50 2.80 I 1.00 1.40 4.80 5.20 F K All Dimensions in mm Maximum Ratings (@TA = 25°C unless otherwise specified) Symbol DB201S DB202S DB203S DB204S DB205S DB206S DB207S UNITS Peak Repetitive Reverse Voltage VRRM 50 100 200 400 600 800 1000 V RMS Reverse Voltage VRMS 35 75 140 280 420 560 700 V DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Characteristic Maximum average forward Output current @TA=25℃ IF(AV) 2.0 A IFSM 60 A I²t 14.9 A²S Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load I²t Rating for fusing @Tj=25℃ Thermal Characteristics Characteristic Symbol Typical thermal resistance per leg Operating junction temperature range Storage temperature range DB201S DB202S DB203S DB204S DB205S DB206S DB207S UNITS R ΘJA 70 R ΘJC 31 RθJL 29 TJ - 55 ---- + 150 ℃ TSTG - 55 ---- + 150 ℃ ℃/W Electrical Characteristics (@TA = 25°C unless otherwise specified) Characteristic Maximum instantaneous forward Symbol voltage at 2.0 A Maximum reverse current @TA=25℃ at rated DC blocking voltage @TA=125℃ DB201S VF IR ht t p : // Revision:20170701-P1 DB202S DB203S DB204S 1.1 10 100 www.lgesemi .c o m DB205S DB206S DB207S UNITS V μA mail:lge@lgesemi.com DB201S-DB207S SILICON BRIDGE RECTIFIERS 100 10 TJ=125°C 1 0.1 TJ=25°C 0.01 0 Device Package DB201S--DB207S DB-S ht t p : // Revision:20170701-P1 20 40 60 80 100 120 140 Shipping 1500/Tape&Reel www.lgesemi .c o m mail:lge@lgesemi.com