BZT52C3V3W

山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD BZT52C2V0W THRU BZT52C75W Surface Mount Zener Diodes PINNING PIN FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0 V to 75V. • Small plastic package suitable for surface mounted design. DESCRIPTION 1 Cathode 2 Anode 2 MECHANICAL DATA ▪Case: SOD-123W ▪Terminals: Solderable per MIL-STD-750, Method 2026 ▪ Approx. Weight:16mg/0.00056oz 1 Simplified outline SOD-123W and symbol Absolute Maximum Ratings And Characteristics （Ta = 25 °C） Symbol Value Unit Power Dissipation PD 500 mW Forward Voltage at I F = 10 mA VF 0.9 V RθJA 305 °C/W T j , T stg -55 ~ +150 °C Parameter Typical thermal resistance juncting to ambient Operating and Storage Temperature Range (1) Fig.1 Maximum Continuous Power Derating 0.6 Power Dissipation ( W ) 0.5 0.4 0.3 0.2 0.1 0.0 25 50 75 100 125 T A , Temperature (°C) 2019.08 150 175 Transient Thermal Impedance（ °C /W） (1) Thermal resistance from junction to ambient at P.C.B. mounted with 7.6mm X 9.4mm X 0.87mm copper areas pads. Fig.2 Typical Transient Thermal Impedance 2000 1000 100 10 0.01 0.1 1 10 100 t, Pulse Duration（sec） SOD-123W-W-BZT52C2V0W~BZT52C75W-500mW Page 1 of 3 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD BZT52C2V0W THRU BZT52C75W Characteristics at Ta = 25°C Maximum Zener (3) Impedance Zener Voltage Range （2） Type Marking V ZT（at I ZT） I ZT Min（V） Nom（V） Max（V） (mA) Reverse Current Z ZT@I ZT I ZT Z ZK@I ZK I ZK IR @V R (Ω) (mA) (Ω) (mA) μA V BZT52C2V0W WY 1.91 2.0 2.09 5 100 5 600 1 150 1.0 BZT52C2V4W WX 2.2 2.4 2.6 5 100 5 600 1 50 1.0 BZT52C2V7W W1 2.5 2.7 2.9 5 100 5 600 1 20 1.0 BZT52C3V0W W2 2.8 3.0 3.2 5 95 5 600 1 10 1.0 BZT52C3V3W W3 3.1 3.3 3.5 5 95 5 600 1 5.0 1.0 BZT52C3V6W W4 3.4 3.6 3.8 5 90 5 600 1 5.0 1.0 BZT52C3V9W W5 3.7 3.9 4.1 5 90 5 600 1 3.0 1.0 BZT52C4V3W W6 4 4.3 4.6 5 90 5 600 1 3.0 1.0 BZT52C4V7W W7 4.4 4.7 5 5 80 5 500 1 3.0 2.0 BZT52C5V1W W8 4.8 5.1 5.4 5 60 5 480 1 2.0 2.0 BZT52C5V6W W9 5.2 5.6 6 5 40 5 400 1 1.0 2.0 BZT52C6V2W WA 5.8 6.2 6.6 5 10 5 150 1 3.0 4.0 BZT52C6V8W WB 6.4 6.8 7.2 5 15 5 80 1 2.0 4.0 BZT52C7V5W WC 7 7.5 7.9 5 15 5 80 1 1.0 5.0 BZT52C8V2W WD 7.7 8.2 8.7 5 15 5 80 1 0.7 5.0 BZT52C9V1W WE 8.5 9.1 9.6 5 15 5 100 1 0.5 6.0 BZT52C10W WF 9.4 10 10.6 5 20 5 150 1 0.2 7.0 BZT52C11W WG 10.4 11 11.6 5 20 5 150 1 0.1 8.0 BZT52C12W WH 11.4 12 12.7 5 25 5 150 1 0.1 8.0 12.4 13 14.1 5 30 5 170 1 0.1 8.0 BZT52C13W WI BZT52C15W WJ 13.8 15 15.6 5 30 5 200 1 0.1 10.5 BZT52C16W WK 15.3 16 17.1 5 40 5 200 1 0.1 11.2 BZT52C18W WL 16.8 18 19.1 5 45 5 225 1 0.1 12.6 BZT52C20W WM 18.8 20 21.2 5 55 5 225 1 0.1 14.0 BZT52C22W WN 20.8 22 23.3 5 55 5 250 1 0.1 15.4 BZT52C24W WO 22.8 24 25.6 5 70 5 250 1 0.1 16.8 BZT52C27W WP 25.1 27 28.9 2 80 2 300 0.5 0.1 18.9 BZT52C30W WQ 28 30 32 2 80 2 300 0.5 0.1 21.0 BZT52C33W WR 31 33 35 2 80 2 325 0.5 0.1 23.1 BZT52C36W WS 34 36 38 2 90 2 350 0.5 0.1 25.2 37 39 41 2 130 2 350 0.5 0.1 27.3 2.5 130 2 500 1 2 33 2.5 150 2 500 1 2 36 BZT52C39W WT BZT52C43W 6A 40 43 46 BZT52C47W 6B 44 47 50 2.5 180 2 500 1 1 37 2.5 180 2 500 1 1 43 BZT52C51W 6C 48 51 54 BZT52C56W 6D 52 56 60 BZT52C62W 6E 58 62 66 2.5 200 2 500 1 0.2 47 BZT52C68W 6F 64 68 72 2.5 250 2 500 1 0.2 52 BZT52C75W 6H 70 75 79 2.5 300 2 500 1 0.2 57 (2) NOTES:（1）f=1KHz （2）Short duration test pulse used to minimize self-heating effect. （3）V ZT is tested with pulses 20ms. 2019.08 Page 2 of 3 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD BZT52C2V0W THRU BZT52C75W PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123W A D b E A1 C ∠ALL ROUND L1 E1 SOD-123W mechanical data A C D E E1 L1 b A1 max 1.3 0.22 1.8 2.8 3.9 0.45 0.7 0.2 min 0.9 0.09 1.5 2.5 3.6 0.25 0.5 max 51 8.7 71 110 154 18 28 min 35 3.5 59 98 142 10 20 UNIT ∠ mm 9° 8 mil The recommended mounting pad size 2.0 (79) 1.2 (47) 1.2 (47) 1.2 (47) Unit： mm (mil) 2019.08 Page 3 of 3