MB6F

MB4F-MB10F SILICON BRIDGE RECTIFIERS MBF FEATURES Dim Min A 4.6 Max 5 B 3.6 4.0 C 1.2 1.6 D 6.5 7.0 E 0.15 0.35 z Glass：passivated chip junctions F 0.7 1.1 I 0.5 0.8 z High surge overload rating: 30A peak K 2.3 2.7 z Saves space on printed circuit boards z High temperature soldering guaranteed: 260°C/10 seconds at 5 lbs. (2.3kg) tension All Dimensions in mm MECHANICAL DATA z Case: Molded plastic body over passivated junctions z Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Maximum Ratings (@TA = 25°C unless otherwise specified) Characteristic Peak Repetitive Reverse Voltage RMS Reverse Voltage DC Blocking Voltage Maximum average forward Output current @TA=25℃ Peak forward surge current 8.3ms single halfsine-wave superimposed on rated load Current squared time t < 8.3ms , Ta = 25℃ Symbol VRRM VRMS VDC MB05F MB1F MB2F MB4F MB6F MB8F MB10F UNITS 100 200 400 600 800 1000 V 70 140 280 420 560 700 V 100 200 400 600 800 1000 V 50 35 50 IF(AV) 0.8 1.0 A IFSM 30 A 3.7 As 2 It 2 Thermal Characteristics Characteristic Typical junction capacitance per leg (NOTE 1) Symbol MB4F MB6F MB8F MB10F UNITS CJ 8 Typical thermal resistance per leg R ΘJA 67 (Note 2)) R ΘJC 24 R ΘJL 13 TJ - 55 ---- + 150 ℃ TSTG - 55 ---- + 150 ℃ Operating junction temperature range Storage temperature range pF °C/W Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts 2. Device mounted on PCB with 10 mm x 20 mm x 0.1mm copper pad areas Electrical Characteristics (@TA = 25°C unless otherwise specified) Characteristic Maximum instantaneous forward voltage at 0.4 A Maximum reverse current @TA=25℃ at rated DC blocking voltage @TA=100℃ Revision:20170701-P1 Symbol VF IR ht t p : // MB4F MB6F MB8F MB10F UNITS 1.0 V 5.0 μA 0.1 mA www.lgesemi .c o m mail:lge@lgesemi.com MB4F-MB10F SILICON BRIDGE RECTIFIERS 2 1 TJ=100°C TJ=25°C TJ=125°C TJ=75°C 0.1 0.4 Revision:20170701-P1 0.6 0.8 1 1.2 Device Package Shipping MB4F--MB10F MBF 5000/Tape&Reel ht t p : // www.lgesemi .c o m mail:lge@lgesemi.com