0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
ES2BBG

ES2BBG

  • 厂商:

    SK(台湾时科)

  • 封装:

    SMB(DO-214AA)

  • 描述:

    表面贴装超快速恢复整流器 1V@2A 5uA@100V 35ns Single 2A -55℃~+150℃@(Tj) 100V SMB

  • 数据手册
  • 价格&库存
ES2BBG 数据手册
ES2ABG THRU ES2JBG Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V Forward Current –2 A PINNING PIN FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Superfast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives DESCRIPTION 1 Cathode 2 Anode 2 1 MECHANICAL DATA • Case : SMB • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight : 0.055g / 0.002oz Top View Marking Code: ES2A~ES2J Simplified outline SMB and symbol Absolute Maximum Ratings and Characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols ES2AB G Maximum Repetitive Peak Reverse Voltage V RRM 50 100 Maximum RMS voltage V RMS 35 Maximum DC Blocking Voltage V DC 50 Maximum Average Forward Rectified Current at T c = 125 °C I F(AV) 2 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 60 A Maximum Forward Voltage at 2 A VF Parameter Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Typical Junction Capacitance at V R =4V, f=1MHz Maximum Reverse Recovery Time (1) Typical Thermal Resistance (2) Operating and Storage Temperature Range ES2EB G ES2GB G ES2JB G Units 150 200 300 400 600 V 70 105 140 210 280 420 V 100 150 200 300 400 600 V 1.25 1 1.68 V IR 5 100 μA Cj 40 pF t rr 35 ns RθJA RθJC 60 20 °C/W T j , T stg -55 ~ +150 °C (1)Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A . (2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. REV.08 ES2DB G ES2BB ES2CB G G 1 of 3 ES2ABG THRU ES2JBG Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive t rr 10 ohm Noninductive +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm NonInductive OSCILLOSCOPE Note 1 -1.0 Note:1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 3.5 300 3.0 100 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 2.5 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 0 175 20 40 Case Temperature (°C) 10 T J =25°C 1.0 ES2ABG~ES2DBG ES2EBG/ES2GBG ES2JBG 0.01 0.5 1.0 1.5 2.0 2.5 Instaneous Forward Voltage (V) Peak Forward Surage Current (A) 80 70 60 50 40 30 20 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles REV.08 100 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 1.0 10 Reverse Voltage (V) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 10 100 T J =25°C 1 0.1 0.001 0 80 Fig.5 Typical Junction Capacitance Junction Capacitance ( pF) Instaneous Forward Current (A) Fig.4 Typical Forward Characteristics 0.1 60 % of PIV.VOLTS 2 of 3 100 ES2ABG THRU ES2JBG PACKAGE OUTLINE SMB Plastic surface mounted package; 2 leads L A A1 C A b D E E1 VM A SMB mechanical data UNIT mm mil A1 L C b 5.59 0.20 1.5 0.305 2.2 3.3 5.08 0.05 0.8 0.152 1.9 155 220 7.9 59 12 87 200 2.0 32 6 75 A E D max 2.44 4.70 3.94 min 2.13 4.06 max 96 185 min 84 130 160 E1 The recommended mounting pad size Marking 2.2 (86) 2.4 (94) 2.8 (110) 2.4 (94) mm Unit : (mil) REV.08 3 of 3 Type number Marking code ES2ABG ES2A ES2BBG ES2B ES2CBG ES2C ES2DBG ES2D ES2EBG ES2E ES2GBG ES2G ES2JBG ES2J
ES2BBG 价格&库存

很抱歉,暂时无法提供与“ES2BBG”相匹配的价格&库存,您可以联系我们找货

免费人工找货
ES2BBG
  •  国内价格
  • 1+0.13680
  • 100+0.12769
  • 300+0.11857
  • 500+0.10945
  • 2000+0.10489
  • 5000+0.10215

库存:3000