ESD9X7V-2/TR

ESD9X7V ESD9X7V 1-Line, Uni-directional, Normal capacitance Transient http//:www.sh-willsemi.com Voltage Suppressor Descriptions The ESD9X7V is a transient voltage suppressor (TVS) which provides a very high level protection for sensitive FBP-02C electronic components that may be subjected to electrostatic discharge (ESD). It is designed to replace multilayer varistors (MLV) in consumer equipment Pin1 Pin2 applications such as mobile phone, notebook, PAD, STB, LCD TV etc. The ESD9X7V was past ESD transient voltage up to ±30kV (contact) according to IEC61000-4-2 Pin configuration (Top view) and withstand peak current up to 9.5A for 8/20µs pulse according to IEC61000-4-5. *J The ESD9X7V is available in FBP-02C package. Standard products are Pb-free and Halogen-free. * = Month (A~Z) J = Device code Marking (Top View) Features  Working voltage : 7V  Peak power (tp=8/20µs) : 161W  ESD protection IEC61000-4-2 (Contact) : ±30kV IEC61000-4-2 (Air) : ±30kV  Low leakage current  Small package Order information Device Package Shipping ESD9X7V-2/TR FBP-02C 10000/Tape&Reel Applications  Mobile phone  PAD  Notebook  STB  LCD TV  Digital camera  Other electronic equipment Will Semiconductor Ltd. 1 Revision 2.3, 2016/07/06 ESD9X7V Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 161 W Peak pulse current (tp = 8/20μs) Ipp 9.5 A ESD according to IEC61000-4-2 air discharge ±30 VESD ESD according to IEC61000-4-2 contact discharge Junction temperature TJ Operating temperature TOP Lead temperature TL Storage temperature kV ±30 TSTG 125 o -40~85 o 260 o -55~150 o C C C C Electronics characteristics (Ta=25 oC, unless otherwise noted) Parameter Symbol Reverse stand-off voltage VRWM Reverse leakage current IR Condition Min. Typ. VRWM=7V Max. Unit 7 V 0.05 µA Reverse breakdown voltage VBR IT=1mA 7.5 8.0 8.8 V Forward voltage VF IF=10mA 0.55 0.9 1.25 V Clamping voltage VC Ipp=1A, tp=8/20µs 10 V Ipp=9.5A, tp=8/20µs 17 V Junction capacitance CJ 65 pF Will Semiconductor Ltd. f=1MHz, VR=0V 2 49 Revision 2.3, 2016/07/06 ESD9X7V characteristics (Ta=25 C, unless otherwise noted) 100 90 Front time: T1= 1.25 T = 8s 100 90 Time to half-value: T2= 20s Current (%) Peak pulse current (%) Typical o 50 T2 10 0 0 10 tr = 0.7~1ns Time (s) T1 8/20µs waveform per IEC61000-4-5 C - Junction capacitance (pF) VC - Clamping voltage (V) Pulse waveform: tp=8/20μs 15 10 5 0 3 6 Time (ns) Contact discharge current waveform per IEC61000-4-2 20 0 t 60ns 30ns 20 T 9 60 40 30 20 10 12 f = 1MHz VAC = 50mV 50 0 1 2 3 4 5 6 Ipp - Peak pulse current (A) VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 7 100 % of Rated power Peak Pulse Power (W) 1000 100 80 60 40 20 10 0 1 10 100 Pulse time (μs) 1000 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 0 Power derating vs. Ambient temperature 3 Revision 2.3, 2016/07/06 ESD9X7V Typical o characteristics (Ta=25 C, unless otherwise noted) 10V/div 10V/div 20ns/div 20ns/div ESD Clamping ESD Clamping (+8kV contact discharge per IEC61000-4-2) (-8kV contact discharge per IEC61000-4-2) Will Semiconductor Ltd. 4 Revision 2.3, 2016/07/06 ESD9X7V Package outline dimensions FBP-02C L D1 D L2 b b1 E E1 L3 L1 e1 e Top View Bottom View Dimensions In Millimeters Min. Typ. Max. A 0.450 0.500 0.550 A1 0.010 -- 0.100 D 0.950 1.000 1.050 E 0.550 0.600 0.650 A A1 Symbol Side View D1 0.470 Ref. E1 0.420 Ref. b 0.270 0.320 0.370 b1 0.250 0.300 0.350 e 0.555 0.605 0.655 e1 L Recommend land pattern (Unit: mm) 0.250 L1 L2 0.40 L3 0.40 0.230 Ref. 0.300 0.350 0.030 Ref. 0.370 0.420 0.470 0.040 Ref. Notes: This recommended land pattern is for reference purposes only. Please consult your manufacturing 0.62 Will Semiconductor Ltd. 0.18 0.50 group to ensure your PCB design guidelines are met. 5 Revision 2.3, 2016/07/06