8050D(1.5A)

8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 1.5 A Power Dissipation Ptot 1 W Tj 150 ℃ TStg - 55 to + 150 ℃ Junction Temperature Storage Temperature Range Characteristics at Ta = 25℃ Parameter DC Current Gain at VCE = 1 V, IC = 5 mA at VCE = 1 V, IC = 100 mA Current Gain Group C D at VCE = 1 V, IC = 800 mA Collector Cutoff Current at VCB = 35 V Emitter Cutoff Current at VEB = 6 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 800 mA, IB = 80 mA Base Emitter Saturation Voltage at IC = 800 mA, IB = 80 mA Base Emitter Voltage at IC = 10 mA, VCE = 1 V Gain Bandwidth Product at VCE = 10 V, IC = 50 mA Collector Base Capacitance at VCB = 10 V, f = 1 MHz Symbol Min. Typ. Max. Unit hFE hFE hFE hFE 45 120 160 40 - 200 300 - - ICBO - - 100 nA IEBO - - 100 nA V(BR)CBO 40 - - V V(BR)CEO 25 - - V V(BR)EBO 6 - - V VCE(sat) - - 0.5 V VBE(sat) - - 1.2 V VBE - - 1 V fT 100 - - MHz COB - 9 - pF SEMTECH ELECTRONICS LTD. ® Dated: 04/03/2016 CL Rev: 02 (A) 8050 (1.5A) SEMTECH ELECTRONICS LTD. ® Dated: 04/03/2016 CL Rev: 02