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ES3JC

ES3JC

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    DO-214AB(SMC)

  • 描述:

    VR=600V IF=3A VF=1.7V IR=5uA trr=35nS

  • 详情介绍
  • 数据手册
  • 价格&库存
ES3JC 数据手册
ES3AC THRU ES3JC Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Ampere SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER Features  The plastic package carries Underwriters Laboratory DO-214AB/SMC Flammability Classification 94V-0  For surface mounted applications  Low reverse leakage  Built-in strain relief,ideal for automated  placement High forward surge current capability  High temperature soldering guaranteed: 0.245(6.22) 0.220(5.59) 0.126 (3.20) 0.114 (2.90) 0.280(7.11) 0.260(6.60)  250°C/10 seconds at terminals 0.012(0.305) 0.006(0.152) Glass passivated chip junction 0.103(2.62) 0.079(2.06) Mechanical Data 0.060(1.52) 0.030(0.76) Case : JEDEC DO-214AB/SMC Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.0077ounce, 0.22grams 0.008(0.203)MAX. 0.320(8.13) 0.305(7.75) Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SYMBOLS Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage VRRM VRMS VDC MDD MDD MDD MDD ES3AC ES3BC ES3CC ES3DC 50 35 50 100 70 100 150 105 150 200 140 200 MDD MDD MDD ES3EC ES3GC ES3JC 300 210 300 400 280 400 600 420 600 UNITS V V V Maximum average forward rectified current at TL=125℃ I(AV) 3.0 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 90 A Maximum instantaneous forward voltage at 3.0A Maximum DC reverse current at rated DCblocking voltage Maximum reverse recovery time TA=25℃ TA=125℃ (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) Operating junction and storage temperature range VF IR trr 1 1.25 V 5.0 100 μA 35 ns pF CJ 40 RJA 40 RθJC 16 TJ,TSTG 1.68 ℃/W -55to+150 ℃ Rev:2024A2 Page :1 Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 2.0”x2.0”(5.0x5.0cm) copper pad areas http://www.microdiode.com ES3AC THRU ES3JC Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Ampere Ratings And Characteristic Curves Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive trr 10 ohm Noninductive +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm NonInductive OSCILLOSCOPE Note 1 -1.0 Note:1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 3.5 300 3.0 100 I R - Reverse Current (μA) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 2.5 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load TJ=125°C 10 TJ=75°C 1.0 TJ=25°C 0.1 0.0 25 50 75 100 125 150 0 175 20 Case Temperature (°C) 80 100 Fig.5 Typical Junction Capacitance 10 Junction Capacitance (pF) Instaneous Forward Current (A) 60 % of PIV.VOLTS Fig.4 Typical Forward Characteristics TJ=25°C 1.0 ES3AC~ES3DC ES3EC/ES3GC 0.1 40 ES3JC 0.01 TJ=25°C 100 10 TJ=25°C f = 1.0MHz Vsig = 50mVp-p 1 0.001 0 0.5 1.0 1.5 2.0 2.5 Instaneous Forward Voltage (V) 0.1 1.0 10 100 Reverse Voltage (V) Peak Forward Surage Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 126 108 90 72 54 36 18 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles The curve above is for reference only. http://www.microdiode.com Rev:2024A2 Page :2 ES3AC THRU ES3JC Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Ampere Packing information P0 unit:mm P1 d Item Symbol Tolerance SMC Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width A B C d D D1 D2 E F P P0 P1 T W Reel width W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 6.15 8.41 2.42 1.50 330.00 50.00 13.00 1.75 7.50 8.00 4.00 2.00 0.25 16.00 16.50 E F B A W P D2 T D1 C W1 D Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE REEL SIZE REEL (pcs) COMPONENT SPACING (mm) SMC 13" 3,000 4.0 INNER BOX (mm) REEL DIA, (mm) 190*190*41 330 BOX (pcs) 6000 CARTON SIZE (mm) 365*365*340 CARTON (pcs) 42000 APPROX. GROSS WEIGHT (kg) 14.0 Suggested Pad Layout http://www.microdiode.com Symbol Unit (mm) A 4.3 0.170 B 0.160 C 4.1 7.9 0.311 D 3.8 0.150 E 12 0.472 Unit (inch) Rev:2024A2 Page :3
ES3JC
1. 物料型号:ES3AC至ES3JC系列。 2. 器件简介:这些是表面安装的超快速恢复整流器,具有UL94V-0的阻燃等级,低反向漏电,内置的应变缓解,适合自动化放置,高正向浪涌电流能力,保证在250°C/10秒下可焊接,采用玻璃钝化芯片。 3. 引脚分配:文档中未明确指出引脚分配,但提供了极性符号标记在封装上,并且可以任意位置安装。 4. 参数特性: - 最大重复峰值反向电压(VRRM):50V至600V。 - 最大有效值电压(VRMS):35V至420V。 - 最大直流阻断电压(Voc):与VRRM相同。 - 最大平均正向整流电流(I(AV)):3.0A。 - 正向浪涌电流(IFSM):某些型号可达到100A。 - 最大瞬时正向电压(VF):在3.0A下,某些型号低至0.95V。 - 最大直流反向电流(IR):在25°C时,某些型号低至5.0μA。 - 最大反向恢复时间(trr):某些型号为35纳秒。 - 典型结电容(CJ):某些型号为45.0pF。 - 典型热阻(ROJA):某些型号为47.0°C/W。 5. 功能详解:文档提供了正向电流降额曲线、瞬时正向特性曲线、结电容曲线、最大非重复峰值正向浪涌电流曲线、瞬时反向特性曲线和瞬态热阻曲线。 6. 应用信息:适用于表面安装应用。 7. 封装信息:JEDEC DO-214AB/SMC模制塑料体,引脚为MIL-STD-750可焊性。
ES3JC 价格&库存

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ES3JC
  •  国内价格
  • 20+0.45580
  • 100+0.34090
  • 800+0.26430
  • 3000+0.19150
  • 15000+0.17240

库存:2404

ES3JC
  •  国内价格
  • 1+0.20148
  • 100+0.18805
  • 300+0.17462
  • 500+0.16119
  • 2000+0.15447
  • 5000+0.15044

库存:793