BAW56

BAW56 SWITCHING DIODE FEATURES Fast Switching Speed z z For General Purpose Switching Applications z High Conductance SOT-23 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFSM 2.0 A PD 225 mW RθJA 556 ℃/W TJ 150 ℃ TSTG -55~+150 ℃ Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range Electrical Characteristics @Ta=25℃ Parameter Reverse breakdown voltage Symbol VR Min Typ Max 70 Unit Conditions V IR=100μA VF1 0.715 V IF=1mA VF2 0.855 V IF=10mA VF3 1 V IF=50mA VF4 1.25 V IF=150mA Reverse current IR 2.5 μA VR=70V Capacitance between terminals CT 1.5 pF VR=0,f=1MHz Reverse recovery time t rr 6 ns Forward voltage  www.slkormicro.com 1 IF = IR = 10mA, Irr= 0.1 x IR, RL = 100Ω BAW56 Forward Reverse Characteristics Characteristics 1000 300 100 (nA) REVERSE CURRENT IR FORWARD CURRENT 10 Ta=100℃ 100 Ta =2 5℃ Ta =1 00 ℃ 30 IF (mA) 300 3 1 30 10 Ta=25℃ 3 0.3 0.1 0.0 1 0.4 0.8 FORWARD VOLTAGE 1.2 VF 0 1.6 20 (V) 40 REVERSE VOLTAGE 60 VR 80 (V) Power Derating Curve Capacitance Characteristics 1.4 300 Ta=25℃ f=1MHz (mW) PD 1.3 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 250 1.2 1.1 200 150 100 50 1.0 0 0 5 10 REVERSE VOLTAGE www.slkormicro.com 15 VR 20 0 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta 125 (℃) 150 BAW56 Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.slkormicro.com 3 Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8°