2N3904(NPN)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
Features
NPN silicon epitaxial planar transistor for switching and
Amplifier applications
As complementary type, the PNP transistor 2N3906 is
Recommended
This transistor is also available in the SOT-23 case with
the type designation MMBT3904
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
6
V
0.2
A
0.625
W
Dimensions in inches and (millimeters)
IC
Collector Current -Continuous
PC
Collector Power Dissipation
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
=
IC=10μA, IE 0
V(BR)CBO
60
V
Collector-emitter breakdown voltage
=
IC= 1mA , IB 0
V(BR)CEO
40
V
Emitter-base breakdown voltage
=
IE= 10μA, IC 0
V(BR)EBO
6
V
Collector cut-off
current
=
VCB=60V, IE 0
ICBO
0.1
μA
Collector cut-off
current
=
VCE= 40V, IB 0
ICEO
0.1
μA
0.1
μA
Emitter cut-off
=
VEB= 5V, IC 0
IEBO
current
DC current gain
hFE1
=
VCE= 1V, IC 10mA
100
hFE2
=
VCE= 1V, IC 50mA
60
hFE3
=
VCE= 1V, IC 100mA
400
30
Collector-emitter saturation voltage
=
IC=50mA, IB 5mA
VCE(sat)
0.3
V
Base-emitter saturation voltage
=
IC=50mA, IB 5mA
VBE(sat)
0.95
V
Transition frequency
fT
VCE=20V,I
=C 10mA,f
= 100MHz
Delay Time
td
VCC=3V,VBE=0.5V,
35
ns
Rise Time
tr
IC=10mA,IB1=1mA
35
ns
Storage Time
ts
VCC=3V, IC=10mA
200
ns
Fall Time
tf
IB1=IB2=1mA
50
ns
CLASSIFICATION
Rank
Range
Revision:20170701-P1
OF
300
MHZ
hFE1
O
Y
G
100-200
200-300
300-400
ht t p : //
www.lgesem i .c o m
mail:lge@lgesemi.com
2N3904(NPN)
TO-92 Bipolar Transistors
Typical Characteristics
Revision:20170701-P1
ht t p : //
www.lgesem i .c o m
mail:lge@lgesemi.com
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