MMBT3904 1AM

MMBT3904 NPN SWITCHING TRANSISTOR 1. BASE 2. EMITTER 3. COLLECTOR FEATURES z Epitaxial planar die construction. z Complementary PNP type available A SOT-23 E K (MMBT3906). z z Min Max A 2.70 3.10 B 1.10 1.50 C Collector Current Capability ICM =200mA. Collector-emitter Voltage VCEO=40V. D J D G H C APPLICATIONS z B Dim 1.0 Typical 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J K 0.1 Typical 2.20 2.60 All Dimensions in mm General switching and amplification ORDERING INFORMATION Type No. Marking MMBT3904 1AM Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCBO collector-base voltage open emitter 60 V VCEO collector-emitter voltage open base 40 V VEBO emitter-base voltage open collector 6 V IC collector current (DC) 100 mA ICM peak collector current 200 mA IBM peak base current 100 mA Ptot total power dissipation 250 mW Tstg storage temperature -65 to +150 °C Tj junction temperature 150 °C Tamb operating ambient temperature -65 to +150 °C ht t p : // Revision:20170701-P1 Tamb≤25°C Value www.lgesemi .c o m UNIT mail:lge@lgesemi.com MMBT3904 NPN SWITCHING TRANSISTOR ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. MAX. ICBO collector cut-off current IEBO UNIT IE = 0; VCB = 30 V - 50 nA emitter cut-off current IC = 0; VEB = 6 V - 50 nA hFE DC current gain VCE = 1 V; IC= 0.1mA IC = 1mA IC = 10mA IC = 50mA IC = 100mA 60 80 100 60 30 300 - VCE（sat） collector-emitter saturation voltage IC = 10mA; IB = 1mA - 200 mV IC = 50mA; IB = 5mA - 300 mV VBE（sat） base-emitter saturation voltage IC = 10mA; IB = 1mA 650 850 mV IC = 50mA; IB = 5mA - 950 mV Cobo Output Capacitance IE = Ie= 0; VCB= 5V; f = 1MHz - 4 pF Cibo Input Capacitance IC = Ic = 0; VBE=500mV; f =1MHz - 8 pF fT transition frequency IC =10mA; VCE =20V; f =100MHz 300 - MHz F noise figure IC=100mA; VCE =5V; RS =1kΩ;f =10Hz to15.7kHz - 5 dB - 35 ns - 35 ns - 200 ns - 50 ns Switching times (between 10% and 90% levels); td delay time tr rise time ts storage time tf fall time Note ICon=10mA; IBon =1mA; IBoff = -1mA Pulse test: tp≤300 ms; d≤0.02. ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com MMBT3904 NPN SWITCHING TRANSISTOR TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified PACKAGE OUTLINE Device Package Shipping MMBT3904 SOT-23 3000/Tape&Reel ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com