2N7002

2N7002 Mosfet (N-Channel) SOT-23 1. GATE 2. SOURCE 3. DRAIN Features — High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability — — — Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V ID Drain Current 115 mA PD Power Dissipation 225 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT VGS=0 V, ID=10 μA 60 Vth(GS) VDS=VGS, ID=250 μA 1 Gate-body Leakage lGSS VDS=0 V, VGS=±25 V Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V On-state Drain Current ID(ON) VGS=10 V, VDS=7 V 500 rDS(0n) VGS=10 V, ID=500mA 1 7.5 Drain-Source On-Resistance VGS=5 V, ID=50mA 1 7.5 VDS=10 V, ID=200mA 80 500 ms VGS=10V, ID=500mA 0.5 3.75 V VGS=5V, ID=50mA 0.05 0.375 V IS=115mA, VGS=0 V 0.55 1.2 V Drain-Source Breakdown Voltage Gate-Threshold Voltage V(BR)DSS gfs Forward Trans conductance Drain-source on-voltage VDS(on) Diode Forward Voltage VSD Input Capacitance Ciss Output Capacitance COSS Reverse Transfer Capacitance CrSS V 2.5 ±80 nA 80 nA mA Ω 50 VDS=25V, VGS=0V, f=1MHz 25 pF 5 SWITCHING TIME Turn-on Time td(on) Turn-off Time td(off) Revision:20170701-P1 ht t p : // VDD=25 V, RL=50Ω ID=500mA,VGEN=10 V RG=25 Ω www.lgesem i .c o m 20 40 ns mail:lge@lgesemi.com 2N7002 Mosfet (N-Channel) Typical characteristics Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com