DB157S

DB151S-DB157S SILICON BRIDGE RECTIFIERS FEATURES z I Surge overload rating to 40 Amperes peak - + B z DBS Rating to 1000V PRVP z Glass passivated chip junctions ~ ~ K Reliable low cost construction utilizing molded E H G plastic technique results in inexpensive product Min Max A 8.20 8.60 6.50 B 6.10 C 2.35 2.65 D 9.80 10.20 E 0.15 0.35 F 0.90 G A C z Dim F D F 1.50 0.20MAX H 2.50 2.80 I 1.00 1.40 4.80 5.20 K All Dimensions in mm z Lead solderable per MIL-STD-202 method 208 z Lead: silver plated copper, solderde plated z Plastic material has UL flammability classification94V-O Maximum Ratings (@TA = 25°C unless otherwise specified) Symbol DB151S DB152S DB153S DB154S DB155S DB156S DB157S UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Reverse Voltage VRMS 35 75 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Characteristic Maximum average forward Output current @TA=40℃ IF(AV) 1.5 A IFSM 50 A I²t 10 A²S Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load I²t Rating for fusing @Tj=25℃ Thermal Characteristics Characteristic Typical thermal resistance per leg Operating junction temperature range Storage temperature range Symbol DB151S DB152S DB153S DB154S R ΘJA 70 R ΘJC 31 RθJL 29 DB155S DB156S DB157S UNITS ℃/W TJ -55 -- +150 ℃ TSTG -55 -- +150 ℃ Electrical Characteristics (@TA = 25°C unless otherwise specified) Characteristic Maximum instantaneous forward voltage at 1.5A Maximum reverse current @TA=25℃ at rated DC blocking voltage @TA=100℃ Symbol DB151S VF IR ht t p : // Revision:20170701-P1 DB152S DB153S DB154S DB155S DB156S DB157S UNITS 1.1 V 5 μA 0.5 mA www.lgesemi .c o m mail:lge@lgesemi.com DB151S-DB157S SILICON BRIDGE RECTIFIERS Device Package DB151S--DB157S DBS ht t p : // Revision:20170701-P1 Shipping 1500/Tape&Reel www.lgesemi .c o m mail:lge@lgesemi.com