2N7002

2N7002 SOT-23 Plastic-Encapsulate Transistors MOSFET(N-Channel) FEATURES High density cell design for low RDS(ON) Voltage cotrolled small signal switch Rugged and reliable High saturation current capability MARKING:7002 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units （符号） （参数名称） （额定值） （单位） VDS Drain-Source voltage 60 V ID Drain current 115 mA PD Power Dissipation 225 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 60 Gate-Threshold Voltage Vth(GS) VDS= VGS, ID=250 uA 1 Gate-body Leakage IGSS VDS=0V, VGS=±20V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V On-state Drain Current ID(ON) VDS=7V, VGS=10V Drain-Source On-Resistance rDS(ON) Forward Trans conductance Drain-source on-voltage gfs TYP MAX UNIT V 1.7 2.5 V ±100 nA 1 uA 500 mA VGS=10V, ID=100mA 1 2 Ω VGS=4.5V, ID=50mA 1.1 3 Ω VDS=10V, ID=200mA 80 500 ms VGS=10V, ID=500mA 0.5 3.75 V VGS=5V, ID=50mA 0.05 0.375 V IS=115mA ,VGS=0V 0.55 1.2 V VDS(ON) Diode Forward Voltage VSD Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 50 VDS=25V, VGS=0V, f=1MHz 25 pF 5 SWITCHING TIME Turn-on Time td(on) Turn-off Time td(off) VDD=25V, RL=50Ω ID=500mA, VGEN=10V, RG=25Ω 1/2 20 ns 40 ns 2N7002 Typical Characteristics 2/2