SS3200

SS32 THRU SS3200 Reverse Voltage - 20 to 200 Volts Forward Current - 3.0 Ampere SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features DO-214AC/SMA  The plastic package carries Underwriters Laboratory Flammability Classification 94V-0  For surface mounted applications  Metal silicon junction,majority carrier conduction  Low power loss,high efficiency 0.110(2.80) 0.090(2.30) 0.067 (1.70) 0.051 (1.30)  Built-in strain relief,ideal for automated placement  High forward surge current capability  High temperature soldering guaranteed: 0.177(4.50) 0.150(3.80) 0.012(0.305) 0.006(0.152) 250 °C/10 seconds at terminals 0.097(2.45) 0.073(1.85) 0.061(1.55) 0.029(0.75) 0.008(0.20) 0.002(0.05) Mechanical Data 0.209(5.30) 0.184(4.70) Case: JEDEC DO-214AC/SMA molded plastic body Terminals: Solderable per MIL-STD-750,Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight : 0.0018 ounce, 0.064 grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SYMBOLS MDD SS32 MDD SS33 MDD SS34 MDD SS35 MDD SS36 MDD SS38 MDD SS310 MDD SS3150 MDD SS3200 UNITS VRR RMM 20 14 20 30 21 30 40 28 40 50 35 50 60 42 60 80 56 80 100 70 100 150 105 150 200 140 200 V V V Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage VRMS VDC Maximum average forward rectified current at TL(see fig.1) I(AV) 3.0 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 80 A Maximum instantaneous forward voltage at 3.0A VF Maximum DC reverse current at rated DCblocking voltage IR TA=25℃ TA=125℃ Typical junction capacitance (NOTE 1) CJ 0.55 0.70 0.85 0.5 5 0.95 0.3 3.0 250 V mA 180 pF 70 ℃/W Typical thermal resistance (NOTE 2) RJA Operating junction temperature range TJ -55 to +125 ℃ TSTG -55 to +150 ℃ Storage temperature range Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas http://www.microdiode.com Rev:2025A6 Page :1 SS32 THRU SS3200 Reverse Voltage - 20 to 200 Volts Forward Current - 3.0 Ampere Typical Characterisitics Fig.2 Typical Reverse Characteristics 3.5 3.0 2.4 1.8 1.2 0.6 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 75 50 100 125 150 Instaneous Reverse Current ( μA) Average Forward Current (A) Fig.1 Forward Current Derating Curve 10 4 SS32 ~ SS36 SS38 ~ SS3200 10 1 10 0 T J =25°C 0 20 40 60 100 80 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Fig.4 Typical Junction Capacitance T J = 2 5°C 10 1.0 SS32~ SS34 SS35~SS36 SS38~SS310 SS3150~SS3200 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Junction Capacitance (pF) 20 1000 500 200 100 20 SS32~SS34 SS35~SS3200 10 1.8 1 0.1 100 10 Instaneous Forward Voltage (V) Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.5- Typical Transient Thermal Impedance 100 80 60 40 20 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 Number of Cycles at 60Hz 100 Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) T J =75°C 10 2 Lead Temperature (°C) Peak Forward Surage Current (A) T J =100°C 10 3 100 10 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） The curve above is for reference only. http://www.microdiode.com Rev:2025A6 Page :2 SS32 THRU SS3200 Reverse Voltage - 20 to 200 Volts Forward Current - 3.0 Ampere Packing information unit:mm P0 Item P1 Symbol Tolerance SMA A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.05 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 2.80 5.33 2.36 1.50 330.00 50.00 178.00 62.00 13.00 1.75 5.50 4.00 4.00 2.00 0.28 12.00 18.00 d E F B A W P D2 T D1 C W1 D Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE S MA REEL SIZE REEL (pcs) COMPONENT SPACING (m/ m) BOX (p cs) IN NER BOX (m/m) REEL DIA, (m/m) CARTON SIZ E (m/m) 13" 5,000 4. 0 1 0,000 340* 350*40 330 370*370* 370 CARTON (p cs) 80, 000 Suggested Pad Layout Symbol A Unit (mm) 1.68 Unit (inch) 0.066 B 1.52 0.060 C 3.93 0.154 D 2.41 0.095 E 5.45 0.215 Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). http://www.microdiode.com Rev:2025A6 Page :3