MM1Z18W

山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MM1Z2V0W THRU MM1Z75W Silicon Planar Zener Diodes PINNING PIN FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5% DESCRIPTION 1 Cathode 2 Anode 2 1 MECHANICAL DATA ▪Case: SOD-123W ▪Terminals: Solderable per MIL-STD-750, Method 2026 ▪ Approx. Weight:16mg/0.00056oz Simplified outline SOD-123W and symbol Absolute Maximum Ratings And Characteristics （Ta = 25 °C） Symbol Value Unit Power Dissipation P tot 500 mW Forward Voltage at I F = 10 mA VF 0.9 V RθJA 340 °C/W T j , T stg -55 ~ +150 °C Parameter Typical thermal resistance juncting to ambient Operating and Storage Temperature Range (1) Fig.1 Maximum Continuous Power Derating 0.6 Power Dissipation ( W ) 0.5 0.4 0.3 0.2 0.1 0.0 25 50 75 100 125 T A , Temperature (°C) 2019.08 150 175 Transient Thermal Impedance（ °C /W） (1) Thermal resistance from junction to ambient at P.C.B. mounted with 2 .0" X 2.0" (5 X 5 cm) copper areas pads. Fig.2 Typical Transient Thermal Impedance 2000 1000 100 10 0.01 0.1 1 10 100 t, Pulse Duration（sec） SOD-123W-W-MM1Z2V0W~MM1Z75W-500mW Page 1 of 3 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MM1Z2V0W THRU MM1Z75W Characteristics at Ta = 25°C Dynamic Impedance Zener Voltage Range （1） Type Marking V ZT（at I ZT） Min（V） Reverse Current I ZT Z ZT（at I ZT） IR at V R Max（μA） （V） Nom（V） Max（V） (mA) Max (Ω) MM1Z2V0W 4A 1.8 2.0 2.15 5 100 120 0.5 MM1Z2V2W 4B 2.08 2.2 2.33 5 100 120 0.7 MM1Z2V4W 4C 2.28 2.4 2.56 5 100 120 1 MM1Z2V7W 4D 2.5 2.7 2.9 5 110 120 1 MM1Z3V0W 4E 2.8 3.0 3.2 5 120 50 1 MM1Z3V3W 4F 3.1 3.3 3.5 5 130 20 1 MM1Z3V6W 4H 3.4 3.6 3.8 5 130 10 1 MM1Z3V9W 4J 3.7 3.9 4.1 5 130 5 1 MM1Z4V3W 4K 4 4.3 4.6 5 130 5 1 4.7 5 MM1Z4V7W 4M 4.4 5 130 2 1 MM1Z5V1W 4N 4.8 5.1 5.4 5 130 2 1.5 MM1Z5V6W 4P 5.2 5.6 6 5 80 1 2.5 MM1Z6V2W 4R 5.8 6.2 6.6 5 50 1 3 MM1Z6V8W 4X 6.4 6.8 7.2 5 30 0.5 3.5 MM1Z7V5W 4Y 7 7.5 7.9 5 30 0.5 4 MM1Z8V2W 4Z 7.7 8.2 8.7 5 30 0.5 5 MM1Z9V1W 5A 8.5 9.1 9.6 5 30 0.5 6 MM1Z10W 5B 9.4 10 10.6 5 30 0.1 7 MM1Z11W 5C 10.4 11 11.6 5 30 0.1 8 MM1Z12W 5D 11.4 12 12.7 5 35 0.1 9 MM1Z13W 5E 12.4 13 14.1 5 35 0.1 10 MM1Z15W 5F 13.8 15 15.6 5 40 0.1 11 MM1Z16W 5H 15.3 16 17.1 5 40 0.1 12 MM1Z18W 5J 16.8 18 19.1 5 45 0.1 13 MM1Z20W 5K 18.8 20 21.2 5 50 0.1 15 MM1Z22W 5M 20.8 22 23.3 5 55 0.1 17 MM1Z24W 5N 22.8 24 25.6 5 60 0.1 19 MM1Z27W 5P 25.1 27 28.9 5 70 0.1 21 MM1Z30W 5R 28 30 32 5 80 0.1 23 MM1Z33W 5X 31 33 35 5 80 0.1 25 90 0.1 27 MM1Z36W 5Y 34 36 38 5 MM1Z39W 5Z 37 39 41 2.5 100 2 30 MM1Z43W 6A 40 43 46 2.5 130 2 33 MM1Z47W 6B 44 47 50 2.5 150 2 36 MM1Z51W 6C 48 51 54 2.5 180 1 39 MM1Z56W 6D 52 56 60 2.5 180 1 43 MM1Z62W 6E 58 62 66 2.5 200 0.2 47 MM1Z68W 6F 64 68 72 2.5 250 0.2 52 MM1Z75W 6H 70 75 79 2.5 300 0.2 57 （1） V ZT is tested with pulses (20 ms) 2019.08 Page 2 of 3 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MM1Z2V0W THRU MM1Z75W PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123W A D b E A1 C ∠ALL ROUND L1 E1 SOD-123W mechanical data A C D E E1 L1 b A1 max 1.3 0.22 1.8 2.8 3.9 0.45 0.7 0.2 min 0.9 0.09 1.5 2.5 3.6 0.25 0.5 max 51 8.7 71 110 154 18 28 min 35 3.5 59 98 142 10 20 UNIT ∠ mm 9° 8 mil The recommended mounting pad size 2.0 (79) 1.2 (47) 1.2 (47) 1.2 (47) Unit： mm (mil) 2019.08 Page 3 of 3