SS810B

山东晶导微电子股份有限公司 SS82B THRU SS820B Jingdao Microelectronics co.LTD Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 8.0A PINNING PIN FEATURES • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications DESCRIPTION 1 Cathode 2 Anode 2 1 Top View Marking Code: S82B~S820B Simplified outline SMB and symbol MECHANICAL DATA • Case: SMB • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 0.1g / 0.0034oz Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter SS82B SS84B SS86B SS88B SS810B SS812B SS815B SS820B Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) 8.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 150 A Max Instantaneous Forward Voltage at 8 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance （1） Typical Thermal Resistance （2） Operating Junction Temperature Range Storage Temperature Range VF 0.45 0.55 0.85 1.0 50 IR Cj 0.70 mA 700 900 V pF RθJA 50 °C/W Tj -55 ~ +125 °C T stg -55 ~ +150 °C （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2020.05 SMB-S-SS82B~SS820B-8A200V Page 1 of 3 山东晶导微电子股份有限公司 SS82B THRU SS820B Jingdao Microelectronics co.LTD Fig.2 Typical Reverse Characteristics Average Forward Current (A) 14 12 10 8 6 4 2 Single phase half-wave 60 Hz resistive or inductive load 0 25 50 75 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve 10 4 10 1 T J =25°C 10 0 0 60 80 100 Fig.4 Typical Junction Capacitance T J =25°C Junction Capacitance ( pF) 20 10 1 SS82B SS84B SS86B SS88B~SS820B 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 SS82BF/SS84BF SS54F/SS520F SS86BF-SS820BF 20 10 0.1 1 10 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance 150 125 100 75 50 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 500 Instaneous Forward Voltage (V) 175 25 1000 1.8 10 100 Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) 40 20 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Peak Forward Surage Current (A) T J =75°C 10 2 Case Temperature (°C) 200 100 10 Number of Cycles at 60Hz 2020.05 T J =100°C 10 3 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 SS82B THRU SS820B Jingdao Microelectronics co.LTD PACKAGE OUTLINE SMB Plastic surface mounted package; 2 leads L A A1 C A b D E E1 VM A SMB mechanical data UNIT mm mil A1 L C b 5.59 0.20 1.5 0.305 2.2 3.3 5.08 0.05 0.8 0.152 1.9 155 220 7.9 59 12 87 200 2.0 32 6 75 A E D max 2.44 4.70 3.94 min 2.13 4.06 max 96 185 min 84 130 160 E1 The recommended mounting pad size Marking Type number 2.2 (86) 2.4 (94) 2.8 (110) 2.4 (94) mm Unit ： (mil) 2020.05 2005268A0 Marking code SS82B S82B SS84B S84B SS86B S86B SS88B S88B SS810B S810B SS812B S812B SS815B S815B SS820B S820B Page 3 of 3