FM8544A

富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM8544A (文件编号：S&CIC2065) SP4T Switch for 4G/5G Applications Features Description  Broadband frequency range: 0.1 to 3.0GHz  Low insertion loss: 0.70dB @2.7GHz The FM8544A is a CMOS silicon-on-insulator (SOI),  High P0.1dB of 43dBm single- pole, four-throw (SP4T) switch. The high linearity  Off Ports, “Open Type” and ruggedness performance and extremely low  Three pin GPIO control Interface for multi-on application insertion loss makes the device an ideal choice for  Small QFN (10-pin, 1.1mm x 1.5mm x 0.45mm) package， GSM/WCDMA/LTE handset antenna tuning application. MSL1 The FM8544A SP4T switch is provided in a compact QFN 1.1mm x 1.5mm x 0.45mm package. A functional block diagram is shown in Figure 1. The pin Applications configuration and package are shown in Figure 2. Signal  GSM/WCDMA/LTE band and mode switching pin assignments and functional pin descriptions are  Antenna tuning switch provided in Table 1. Figure 1 Functional Block Diagram Figure 2 Pin-Out(Top View) Version 1.0 Page 1 Copyright©2021, ShenZhen FM Co.ltd 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM8544A (文件编号：S&CIC2065) SP4T Switch for 4G/5G Applications Function Characteristics Figure 3 Application Circuit Table 1 Pin Description No. Name Description No. Name Description 1 RF1 RF Port 1 6 V2 Logic Control Voltage 2 2 RF2 RF Port 2 7 GND Ground 3 V3 Logic Control Voltage 3 8 RF4 RF Port 4 4 VDD DC Power Supply 9 RF3 RF Port 3 5 V1 Logic Control Voltage 1 10 ANT Antenna Port Table 2 VC Truth Table of for RF Channel Operating Mode RF Channel Operating V1 V2 V3 Low Low High All Ron Low High High ANT to RF1 and RF2 Version 1.0 Page 2 Mode Copyright©2021, ShenZhen FM Co.ltd 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM8544A (文件编号：S&CIC2065) SP4T Switch for 4G/5G Applications High Low High ANT to RF3 and RF4 Low Low Low ANT to RF1 Low High Low ANT to RF2 High Low Low ANT to RF3 High High Low ANT to RF4 High High High All isolation Electrical Characteristics Table 3 Absolute Maximum Ratings Parameter Symbol Min Max Unit VDD -0.3 +4.8 V VC -0.3 +3.3 V PIN +43 dBm Vpeak 60 V DC Supply Voltage Digital Control Voltage RF Input Peak Power Max Input Power between any combination of RF ports or ground VRF, VDD = 2.85VDC, VCTL1/2 = 0/1.8VDC, Temp = 25℃ @20% DC Max voltage between any combination of RF ports or ground VRF, VDD = 2.85VDC, VCTL1/2 = 0/1.8VDC, Temp = 25℃ @20% DC Device Operating Temperature TOP -40 +90 ℃ Device Storage Temperature TSTG -55 +150 ℃ Electrostatic Discharge Human Body Model (HBM), Class 2 VESD(HBM) Charged Device Model (CDM), Class III VESD(CDM) 1000 1000 V V Notice Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device. Version 1.0 Page 3 Copyright©2021, ShenZhen FM Co.ltd 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM8544A (文件编号：S&CIC2065) SP4T Switch for 4G/5G Applications Table 4 Recommended Operating Conditions Parameter Symbol MIN F0 0.1 DC Supply Voltage VDD 2.5 Logic Control Voltage High VCH Logic Control Voltage Low VCL Operating Frequency TYP MAX Unit 3.0 GHz 2.8 4.2 V 1.0 1.8 3.0 V 0 0 0.3 V Table 5 Nominal Operating Parameters Parameter Symbol Specification MIN Normal Condition TYP Unit Condition MAX VDD=2.8V, VCH=1.8V, VCL=0V, PIN=0dBm, ZO=50Ω, TA=25℃, Unless Otherwise Stated DC Performances DC Supply Current Current on Logic Control IDD 80 IC 120 μA 1 5 μA Startup Time TON 10 20 μs Switching Speed TSW 4 5 μs 50% of final VDD to 90% of the final RF 50% of final VC to 90%/10% of the final RF RF Performances Insertion Loss IL (ANT to RF1/2/3/4) Isolation (ANT to RF1/2/3/4) ISO 0.30 0.35 0.50 0.60 0.70 0.85 21 23 17 20 12 14 dB dB dB dB dB dB F0=0.8 to 1.0GHz F0=1.0 to 2.2GHz F0=2.2 to 3.0GHz F0=0.8 to 1.0GHz F0=1.0 to 2.2GHz F0=2.2 to 3.0GHz Return Loss (ANT to RF1/2/3/4) RL 15 dB RON 1.0 1.5 COF 150 170 F0=0.8 to 3.0GHz On Resistance (ANT to RF1/2/3/4) Switch On Path@DC Off Capacitance (ANT to RF1/2/3/4) Version 1.0 fF Switch Off Path@500MH F Page 4 Copyright©2021, ShenZhen FM Co.ltd 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM8544A (文件编号：S&CIC2065) SP4T Switch for 4G/5G Applications Peak RF Operating VRF 60 LTE TX Harmonic 2F0 -70 -65 dBm (RF1/2/3/4 to ANT) 3F0 -75 -65 dBm GSM LB Harmonic 2F0 -60 -52 dBm (RF1/2/3/4 to ANT) 3F0 -70 -60 dBm GSM HB Harmonic 2F0 -65 -58 dBm (RF1/2/3/4 to ANT) 3F0 -70 -60 dBm Voltage V F0=950MHz, 20% duty cycle F0= 0.7 to 2.7GHz @+26dBm F0= 824 to 915MHz @+35dBm F0= 1710 to 2690MHz @+33dBm Tape and Reel Dimensions Figure 6 Tape and Reel Dimensions Version 1.0 Page 5 Copyright©2021, ShenZhen FM Co.ltd 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM8544A (文件编号：S&CIC2065) SP4T Switch for 4G/5G Applications Reflow Chart Figure 7 Recommended Lead-Free Reflow Profile Table 7 Reflow Chart Parameters Reflow Profile Parameter Preheat Temperature(TSMIN to TSMAX) 150℃ to 200℃ 60 to 180 Seconds Preheat Time(ts) Ramp-Up Rate(TSMAX to TP) 3℃/s MAX 60 to 150 Seconds Time Above TL 217℃(tL) Peak Temperature（TP） 260℃ Time within 5℃ of Peak Temperature(tP) 20 to 40 Seconds Ramp-Down Rate(TSMAX to TP) 6℃/s MAX Time for 25℃ to Peak Temperature(t25-TP) 8 Minutes MAX ESD Sensitivity Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD protection techniques should be applied when devices are operating. RoHS Compliant This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB) and polybrominated diphenyl ethers (PBDE), and is considered RoHS compliant. Version 1.0 Page 6 Copyright©2021, ShenZhen FM Co.ltd